公开(公告)号：US20060251825A1

公开(公告)日：2006-11-09

申请号：US11474348

申请日：2006-06-26

申请人： Toshiyuki Ohdaira ,  Yoshimi Shioya

发明人： Toshiyuki Ohdaira ,  Yoshimi Shioya

IPC分类号： B05D3/06

CPC分类号： H01L21/02126 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02137 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02348 ,  H01L21/3122 ,  H01L21/31612 ,  H01L21/31633 ,  Y10T428/31663

摘要： The present invention relates to a method of forming a low dielectric constant insulating film. Its constitution has the steps of: (a) forming an insulating film containing Si—CH3 bond in the skeleton of Si—O—Si on a substrate; (b) irradiating ultraviolet ray to the insulating film in reduced-pressure atmosphere to break CH3 groups from Si—CH3 bond in the insulating film; and (c) ejecting the broken CH3 groups from the insulating film.

摘要翻译： 本发明涉及形成低介电常数绝缘膜的方法。 其结构具有以下步骤：（a）在基板上的Si-O-Si的骨架中形成含有Si-CH 3键的绝缘膜; （b）在减压气氛中对绝缘膜照射紫外线，以从绝缘膜中的Si-CH 3键断开CH 3 3个基团; 和（c）从绝缘膜喷出断裂的CH 3 3个基团。

公开(公告)号：US06649495B2

公开(公告)日：2003-11-18

申请号：US10164709

申请日：2002-06-10

申请人： Yoshimi Shioya ,  Yuhko Nishimoto ,  Tomomi Suzuki ,  Hiroshi Ikakura ,  Kazuo Maeda

发明人： Yoshimi Shioya ,  Yuhko Nishimoto ,  Tomomi Suzuki ,  Hiroshi Ikakura ,  Kazuo Maeda

IPC分类号： H01L2120

CPC分类号： H01L21/76834 ,  C23C16/0272 ,  C23C16/401 ,  C23C16/5096 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/76801 ,  H01L21/76807 ,  H01L2221/1036

摘要： The present invention relates to a manufacturing method of a semiconductor device in which a barrier insulating film and a main insulating film having low relative dielectric constant are sequentially formed while a wiring mainly consisting of copper film is coated. Its constitution includes the steps of: forming the barrier insulating film 35a on a substrate 21 subject to deposition, in which an electric power having a first frequency (f1) is applied to a first film forming gas containing at least silicon-containing gas and oxygen-containing gas to transform said first film forming gas into plasma and to cause reaction; and forming the main insulating film 35b having low relative dielectric constant on the barrier insulating film 35a, in which an electric power having a second frequency (f2) higher than the first frequency (f1) is applied to a second film forming gas containing at least the silicon-containing gas and the oxygen-containing gas to transform the second film forming gas into plasma and to cause reaction.

摘要翻译： 半导体器件的制造方法技术领域本发明涉及一种半导体器件的制造方法，其中，在主要由铜膜构成的布线被涂覆的同时依次形成具有低相对介电常数的阻挡绝缘膜和主绝缘膜。 其结构包括以下步骤：在沉积的基板21上形成阻挡绝缘膜35a，其中具有第一频率（f1）的电力施加到至少含有含硅气体和氧气的第一成膜气体 以将所述第一成膜气体转化为等离子体并引起反应; 并且在隔离绝缘膜35a上形成具有低相对介电常数的主绝缘膜35b，其中具有比第一频率（f1）高的第二频率（f2）的电力施加到至少包含至少 含硅气体和含氧气体，以将第二成膜气体转化为等离子体并引起反应。

公开(公告)号：US06514855B1

公开(公告)日：2003-02-04

申请号：US09547852

申请日：2000-04-12

申请人： Tomomi Suzuki ,  Hiroshi Ikakura ,  Kazuo Maeda ,  Yoshimi Shioya ,  Koichi Ohira

发明人： Tomomi Suzuki ,  Hiroshi Ikakura ,  Kazuo Maeda ,  Yoshimi Shioya ,  Koichi Ohira

IPC分类号： H01L214763

CPC分类号： H01L21/02063 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02321 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/02362 ,  H01L21/3105 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/312 ,  H01L21/3145 ,  H01L21/31633 ,  H01L21/3185 ,  H01L21/76801 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76834

摘要： The present invention relates to a semiconductor device manufacturing method for forming a via hole or a contact hole in an interlayer insulating film with a low dielectric constant. The method includes the steps of forming a nitrogen containing insulating film on a substrate, forming a porous insulating film on the nitrogen-containing insulating film, forming an opening in the underlying insulating film and the porous insulating film, and forming a nitrogen containing insulating film on the surface of the porous insulating film and on the surface of the opening by bringing these surfaces into contact with a plasma of any one of an ammonia gas, a nitrogen gas, and an oxygen nitride gas.

摘要翻译： 本发明涉及在具有低介电常数的层间绝缘膜中形成通孔或接触孔的半导体器件制造方法。 该方法包括在基板上形成含氮绝缘膜的步骤，在含氮绝缘膜上形成多孔绝缘膜，在下面的绝缘膜和多孔绝缘膜上形成开口，并形成含氮绝缘膜 通过使这些表面与氨气，氮气和氮氧化物气体中的任一种的等离子体接触，在多孔绝缘膜的表面上和开口的表面上。

公开(公告)号：US06479408B2

公开(公告)日：2002-11-12

申请号：US09843725

申请日：2001-04-30

申请人： Yoshimi Shioya ,  Kouichi Ohira ,  Kazuo Maeda

发明人： Yoshimi Shioya ,  Kouichi Ohira ,  Kazuo Maeda

IPC分类号： H01L2131

CPC分类号： H01L21/02126 ,  C23C16/30 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3122 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76834 ,  H01L21/76838

摘要： The present invention relates to a semiconductor device manufacturing method for forming an interlayer insulating film having a low dielectric constant by coating a copper wiring. The semiconductor device manufacturing method comprises the steps of preparing a substrate 21 from a surface of which copper wirings 23 are exposed, and forming an interlayer insulating film having a low dielectric constant on the substrate 21, wherein the interlayer insulating film is formed of a multi-layered insulating film including a insulating film 24 that contacts with the copper wirings 23, and the insulating film 24 is formed by plasmanizing a film forming gas containing an alkyl compound having an Si—O—Si bond and one oxygen-containing gas selected from the group consisting of N2O, H2O, and CO2, whose flow rate is equal to or less than a flow rate of the siloxane, to react mutually.

摘要翻译： 本发明涉及通过涂覆铜布线形成具有低介电常数的层间绝缘膜的半导体器件制造方法。 半导体器件制造方法包括从衬底21暴露的表面制备衬底21，并且在衬底21上形成具有低介电常数的层间绝缘膜的步骤，其中层间绝缘膜由多 包括与铜布线23接触的绝缘膜24的绝缘膜，绝缘膜24通过将含有具有Si-O-Si键的烷基化合物和一种含氧气体的成膜气体等离子化而形成，该含氧气体选自 由流动相等于或小于硅氧烷流量的N2O，H2O和CO2组成的组相互反应。

公开(公告)号：US4394401A

公开(公告)日：1983-07-19

申请号：US290978

申请日：1981-08-07

申请人： Yoshimi Shioya ,  Mamoru Maeda ,  Kanetake Takasaki ,  Mikio Takagi

发明人： Yoshimi Shioya ,  Mamoru Maeda ,  Kanetake Takasaki ,  Mikio Takagi

IPC分类号： C01B33/113 ,  C03C17/02 ,  C03C17/245 ,  C23C16/30 ,  C23C16/40 ,  C23C16/50 ,  C23C16/509 ,  C30B25/02 ,  C30B29/18 ,  H01L21/316

CPC分类号： H01L21/02129 ,  C23C16/401 ,  C23C16/5096 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31625

摘要： A method of plasma enhanced chemical vapor deposition of a phosphosilicate glass film on a substrate from a reaction gas mixture including SiH.sub.4, N.sub.2 O and PH.sub.3 is disclosed. This deposition is effected under the conditions such that a mol ratio of N.sub.2 O to SiH.sub.4 (N.sub.2 O/SiH.sub.4) in the reaction gas mixture is 50 or more and that a mol ratio of PH.sub.3 to SiH.sub.4 (PH.sub.3 /SiH.sub.4) in the reaction gas mixture is 0.08 or less. In the phosphosilicate glass film thus deposited, no cracking occurs due to a high temperature heat-treatment and due to the stress, caused by cooling the deposited films to an ordinarily ambient temperature.

摘要翻译： 公开了一种从包括SiH 4，N 2 O和PH 3的反应气体混合物在基底上等离子体增强化学气相沉积磷硅酸盐玻璃膜的方法。 这种沉积是在反应气体混合物中N2O与SiH4（N2O / SiH4）的摩尔比为50以上，反应气体混合物中PH3〜SiH4（PH3 / SiH4）的摩尔比为 0.08以下。 在这样沉积的磷硅玻璃膜中，不会由于高温热处理而引起裂纹，并且由于通过将沉积膜冷却到常规环境温度而引起的应力。

公开(公告)号：US07132171B2

公开(公告)日：2006-11-07

申请号：US10847670

申请日：2004-05-18

申请人： Toshiyuki Ohdaira ,  Yoshimi Shioya

发明人： Toshiyuki Ohdaira ,  Yoshimi Shioya

IPC分类号： B32B25/20

CPC分类号： H01L21/02126 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02137 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02348 ,  H01L21/3122 ,  H01L21/31612 ,  H01L21/31633 ,  Y10T428/31663

摘要： The present invention relates to a method of forming a low dielectric constant insulating film. Its constitution has the steps of: (a) forming an insulating film containing Si—CH3 bond in the skeleton of Si—O—Si on a substrate; (b) irradiating ultraviolet ray to the insulating film in reduced-pressure atmosphere to break CH3 groups from Si—CH3 bond in the insulating film; and (c) ejecting the broken CH3 groups from the insulating film.

公开(公告)号：US06642157B2

公开(公告)日：2003-11-04

申请号：US09742242

申请日：2000-12-22

申请人： Yoshimi Shioya ,  Yuichiro Kotake ,  Youichi Yamamoto ,  Tomomi Suzuki ,  Hiroshi Ikakura ,  Shoji Ohgawara ,  Kouichi Ohira ,  Kazuo Maeda

发明人： Yoshimi Shioya ,  Yuichiro Kotake ,  Youichi Yamamoto ,  Tomomi Suzuki ,  Hiroshi Ikakura ,  Shoji Ohgawara ,  Kouichi Ohira ,  Kazuo Maeda

IPC分类号： H01L2131

CPC分类号： H01L21/02274 ,  C23C16/308 ,  C23C16/402 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/31116 ,  H01L21/3122 ,  H01L21/3145 ,  H01L21/31612 ,  H01L21/31695 ,  H01L21/76802

摘要： There is provided the film forming method of forming the insulating film 204 containing silicon on the substrate 103 by plasmanizing the compound having the siloxane bonds and the oxidizing gas to react with each other.

摘要翻译： 提供了通过使具有硅氧烷键的化合物和氧化气体通过等离子体反应而在衬底103上形成含有硅的绝缘膜204的成膜方法。

公开(公告)号：US06630412B2

公开(公告)日：2003-10-07

申请号：US09897069

申请日：2001-07-03

申请人： Yoshimi Shioya ,  Kouichi Ohira ,  Kazuo Maeda ,  Tomomi Suzuki ,  Hiroshi Ikakura ,  Youichi Yamamoto

发明人： Yoshimi Shioya ,  Kouichi Ohira ,  Kazuo Maeda ,  Tomomi Suzuki ,  Hiroshi Ikakura ,  Youichi Yamamoto

IPC分类号： H01L2131

CPC分类号： H01L21/02126 ,  C23C16/308 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3122 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76834

摘要： In a semiconductor device manufacturing method for forming an interlayer insulating film having a low dielectric constant on a substrate 21 from a surface of which a copper wiring 23 is exposed, the interlayer insulating film consists of multi-layered insulating films 24, 25, 29 and the insulating film 24, that contacts to the copper wiring 23, out of the multi-layered insulating films 24, 25, 29 is formed by plasmanizing a film forming gas containing at least an alkyl compound having siloxane bonds and any one of nitrogen (N2) and ammonia (NH3) to react.

公开(公告)号：US4487787A

公开(公告)日：1984-12-11

申请号：US436294

申请日：1982-10-25

申请人： Yoshimi Shioya ,  Mikio Takagi

发明人： Yoshimi Shioya ,  Mikio Takagi

IPC分类号： C23C16/40 ,  C23C16/455 ,  C30B31/02 ,  H01L21/225 ,  H01L21/316

CPC分类号： H01L21/31625 ,  C23C16/401 ,  C23C16/455 ,  C30B29/06 ,  C30B31/02 ,  H01L21/02129 ,  H01L21/02271 ,  H01L21/2255

摘要： Impurity concentration doped in PSG deposited on semiconductor substrates employing chemical vapor deposition process depends on the flow rate of reactive gases in the neighborhood of the first one of the plural semiconductor substrates processed with the same equipment in one batch at the same time. Regulation of the flow rate of the reactive gases in the neighborhood of the first one of the plural semiconductor substrates processed with the same equipment in one batch at the same time is effective to make the impurity concentration doped in PSG uniform for all the semiconductor substrates processed in one batch employing the presently available sealed tube type equipment for vacuum vapor deposition process. The flow rate regulation is possible by monitoring readings of a manometer which is arranged around the inlets thereof and which was calibrated by the flow rate of a nonreactive gas such as nitrogen gas.

摘要翻译： 使用化学气相沉积工艺沉积在半导体衬底上的PSG中掺杂的杂质浓度取决于同时在一批中用相同设备处理的多个半导体衬底中的第一个半导体衬底附近的反应气体的流速。 同时在同一设备中处理的多个半导体衬底中的第一个半导体衬底附近的反应气体的流量的调节对于所加工的所有半导体衬底均匀掺杂PSG中的杂质浓度是有效的 在一批中使用目前可用的真空气相沉积工艺的密封管式设备。 通过监测布置在其入口周围的压力计的读数并且通过诸如氮气的非反应性气体的流量校准的流量调节是可能的。

公开(公告)号：US20090039475A1

公开(公告)日：2009-02-12

申请号：US12089029

申请日：2006-04-24

申请人： Yoshimi Shioya

发明人： Yoshimi Shioya

IPC分类号： H01L23/58 ,  G21G5/00 ,  C23C16/00

CPC分类号： H01L21/3105 ,  C23C16/401 ,  C23C16/482 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02181 ,  H01L21/02345 ,  H01L21/02348 ,  H01L21/31633 ,  H01L21/3185 ,  H01L21/67115 ,  H01L21/67207

摘要： To provide a semiconductor manufacturing apparatus which is able to improve insulation film.An irradiating device comprises irradiating means for irradiating light with a wavelength longer than one corresponding to the absorption edge of insulation film for said insulation film and shorter than one necessary for cutting chemical bonds, to which hydrogen of said insulation film is related.

摘要翻译： 提供能够提高绝缘膜的半导体制造装置。 照射装置包括照射装置，用于照射波长比对应于绝缘膜的绝缘膜的吸收边缘的波长的光，并且短于所述绝缘膜的氢与之相关的切割化学键所必需的光。