The present invention provides a method improving the adhesion between inter metal dielectric (IMD) layers by performing a HF dip etch to treat the surface of an oxide, silicon nitride or Silicon oxynitride insulating layer before an overlying low-K layer is formed. The present invention provides a method of fabricating a low-K IMD layer 20 over an oxide, Silicon oxynitride (SiON), or nitride IMD layer 14 with improved adhesion. First, a 1st inter metal dielectric (IMD) layer 14 is formed over a substrate. Next, the invention's novel HF dip etch is performed on the 1st IMD layer 14 to form a treated surface 16. Next, a 2nd BMD layer composed of a low-K material is formed over the rough surface 16 of the 1st IMD layer 14. The treated surface 16 improves the adhesion between a 1st IMD layer oxide (oxide, SiN or SiON) and a low k layer. Subsequent photoresist strip steps do not cause the 1st IMI layer 14 and the 2nd IMD layer 20 (low-K dielectric) to peel.