发明授权
US06475810B1 Method of manufacturing embedded organic stop layer for dual damascene patterning
失效
用于双镶嵌图案的嵌入式有机停止层的制造方法
- 专利标题： Method of manufacturing embedded organic stop layer for dual damascene patterning
- 专利标题（中）： 用于双镶嵌图案的嵌入式有机停止层的制造方法
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申请号： US09636579申请日： 2000-08-10
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公开(公告)号： US06475810B1公开(公告)日： 2002-11-05
- 发明人: Mei Sheng Zhou , John Leonard Sudijono , Subhash Gupta , Sudipto Ranendra Roy , Paul Kwok Keung Ho , Yi Xu , Simon Chooi , Yakub Aliyu
- 申请人： Mei Sheng Zhou , John Leonard Sudijono , Subhash Gupta , Sudipto Ranendra Roy , Paul Kwok Keung Ho , Yi Xu , Simon Chooi , Yakub Aliyu
- 主分类号： H01L2158
- IPC分类号： H01L2158
摘要：
A new method of forming a dual damascene interconnect structure, wherein damage of interconnect and contamination of dielectrics during etching is minimized by having an embedded organic stop layer over the lower interconnect and later etching the organic stop layer with an H2 containing plasma, or hydrogen radical.
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