发明授权
- 专利标题: Semiconductor memory device and fabrication method thereof
- 专利标题(中): 半导体存储器件及其制造方法
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申请号: US09544214申请日: 2000-04-07
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公开(公告)号: US06479346B1公开(公告)日: 2002-11-12
- 发明人: Sang-Bai Yi , Jae-Min Yu , Sung-Chul Lee
- 申请人: Sang-Bai Yi , Jae-Min Yu , Sung-Chul Lee
- 优先权: KR99/16622 19990510
- 主分类号: H01L21336
- IPC分类号: H01L21336
摘要:
In a semiconductor memory device including memory cells and a peripheral circuit unit, a memory cell has a first gate structure formed on a semiconductor substrate; a first impurity region of a first conductive type formed in the substrate on a first side of the gate structure; and a second impurity region formed in the substrate on a second side of the gate structure, the second impurity region including: a third impurity region of the first conductive type, a fourth impurity region of the first conductive type between the third impurity region and the second side of the gate structure, and a halo ion region of a second conductive type formed adjacent to the fourth impurity region.