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发明授权
US06483734B1 Memory device having memory cells capable of four states 有权
具有能够具有四种状态的存储单元的存储器件

  • 专利标题： Memory device having memory cells capable of four states
  • 专利标题（中）： 具有能够具有四种状态的存储单元的存储器件
  • 申请号： US09992426
    申请日： 2001-11-26
  • 公开(公告)号： US06483734B1
    公开(公告)日： 2002-11-19
  • 发明人: Manish Sharma , Lung T. Tran
  • 申请人： Manish Sharma , Lung T. Tran
  • 主分类号： G11C1702
  • IPC分类号： G11C1702
Memory device having memory cells capable of four states
摘要：
A memory device includes memory cells having a re-writeable element and a write-once element in series with the re-writeable element. The re-writeable element is programmable between a high resistance state and a low resistance state. The write-once element can be an anti-fuse element that is programmable from a high resistance state to a low resistance state, or a fuse element that is programmable from a low resistance state to a high resistance state. The two possible states for the re-writeable element and the two possible states for the write-once element allow the memory cells to store four different bits.
摘要（中）：

存储器件包括具有可重写元件和与可重写元件串联的一次写入元件的存储器单元。 可重写元件可在高电阻状态和低电阻状态之间编程。 一次写入元件可以是可从高电阻状态到低电阻状态的可编程熔丝元件，或可从低电阻状态到高电阻状态的可编程熔丝元件。 可重写元件的两种可能状态和一次写入元件的两种可能状态允许存储单元存储四个不同的位。

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