发明授权
US06486061B1 Post-deposition treatment to enhance properties of Si-O-C low K films
失效
后沉积处理以提高Si-O-C低K膜的性能
- 专利标题： Post-deposition treatment to enhance properties of Si-O-C low K films
- 专利标题（中）： 后沉积处理以提高Si-O-C低K膜的性能
-
申请号： US09632669申请日： 2000-08-07
-
公开(公告)号： US06486061B1公开(公告)日： 2002-11-26
- 发明人: Li-Qun Xia , Frederic Gaillard , Ellie Yieh , Tian H. Lim
- 申请人： Li-Qun Xia , Frederic Gaillard , Ellie Yieh , Tian H. Lim
- 优先权： EP99402074 19990817
- 主分类号： H01L2144
- IPC分类号： H01L2144
摘要：
A method for providing a dielectric film having enhanced adhesion and stability. The method includes a post deposition treatment that densifies the film in a reducing atmosphere to enhance stability if the film is to be cured ex-situ. The densification generally takes place in a reducing environment while heating the substrate. The densification treatment is particularly suitable for silicon-oxygen-carbon low dielectric constant films that have been deposited at low temperature.
信息查询
