公开(公告)号：US07326657B2

公开(公告)日：2008-02-05

申请号：US10990251

申请日：2004-11-15

申请人： Li-Qun Xia ,  Frederic Gaillard ,  Ellie Yieh ,  Tian H. Lim

发明人： Li-Qun Xia ,  Frederic Gaillard ,  Ellie Yieh ,  Tian H. Lim

IPC分类号： H01L21/31

CPC分类号： H01L21/02126 ,  C23C16/0218 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02071 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02312 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02362 ,  H01L21/3105 ,  H01L21/3146 ,  H01L21/31604 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/76807 ,  H01L21/76826 ,  H01L21/76837 ,  Y10S438/931

摘要： A method for providing a dielectric film having enhanced adhesion and stability. The method includes a post deposition treatment that densifies the film in a reducing atmosphere to enhance stability if the film is to be cured ex-situ. The densification generally takes place in a reducing environment while heating the substrate. The densification treatment is particularly suitable for silicon-oxygen-carbon low dielectric constant films that have been deposited at low temperature.

摘要翻译： 一种用于提供具有增强的粘合性和稳定性的电介质膜的方法。 该方法包括在还原气氛中使膜致密化的后沉积处理，以提高如果该膜不原位固化的稳定性。 致密化通常在还原环境中进行，同时加热基底。 致密化处理特别适用于在低温下沉积的硅 - 氧 - 碳低介电常数膜。

公开(公告)号：US06899763B2

公开(公告)日：2005-05-31

申请号：US10291296

申请日：2002-11-08

申请人： Himansu Pokharna ,  Li-Qun Xia ,  Tian H. Lim

发明人： Himansu Pokharna ,  Li-Qun Xia ,  Tian H. Lim

IPC分类号： C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  H01L21/316 ,  C23C16/00

CPC分类号： C23C16/45572 ,  C23C16/401 ,  C23C16/4411 ,  C23C16/455 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02208 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02312 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02362 ,  H01L21/31612 ,  H01L21/31633

摘要： An apparatus and method for depositing thin films. The apparatus generally comprises a process chamber having one or more walls and a lid and two heat exchangers. A first heat exchanger is coupled to the walls and a second heat exchanger is coupled to the lid. The two heat exchangers are configured to provide separate temperature control of the walls and lid. Separate control of the lid and wall temperatures inhibits reaction of the organosilane within the lid while optimizing a reaction within the chamber. The apparatus implements a method, in which a process gas comprising ozone and an organosilane are admitted through the into a processing while a substrate is heated to form a carbon-doped silicon oxide layer over the substrate. During deposition, the lid is kept cooler than the walls.

摘要翻译： 一种用于沉积薄膜的设备和方法。 该装置通常包括具有一个或多个壁和盖和两个热交换器的处理室。 第一热交换器耦合到壁并且第二热交换器联接到盖。 两个热交换器被配置为提供对壁和盖的单独的温度控制。 单独控制盖子和壁温度可以抑制盖子内的有机硅烷的反应，同时优化室内的反应。 该装置实现了一种方法，其中包括臭氧和有机硅烷的处理气体通过加热进入处理，同时加热基板以在基板上形成碳掺杂的氧化硅层。 在沉积过程中，盖子比墙壁保持冷却。

公开(公告)号：US20080132087A1

公开(公告)日：2008-06-05

申请号：US12013232

申请日：2008-01-11

申请人： Li-Qun Xia ,  Frederic Gaillard ,  Ellie Yieh ,  Tian H. Lim

发明人： Li-Qun Xia ,  Frederic Gaillard ,  Ellie Yieh ,  Tian H. Lim

IPC分类号： H01L21/31

CPC分类号： H01L21/02126 ,  C23C16/0218 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02071 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02312 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02362 ,  H01L21/3105 ,  H01L21/3146 ,  H01L21/31604 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/76807 ,  H01L21/76826 ,  H01L21/76837 ,  Y10S438/931

摘要： A method for providing a dielectric film having enhanced adhesion and stability. The method includes a post deposition treatment that densifies the film in a reducing atmosphere to enhance stability if the film is to be cured ex-situ. The densification generally takes place in a reducing environment while heating the substrate. The densification treatment is particularly suitable for silicon-oxygen-carbon low dielectric constant films that have been deposited at low temperature.

摘要翻译： 一种用于提供具有增强的粘合性和稳定性的电介质膜的方法。 该方法包括在还原气氛中使膜致密化的后沉积处理，以提高如果该膜不原位固化的稳定性。 致密化通常在还原环境中进行，同时加热基底。 致密化处理特别适用于在低温下沉积的硅 - 氧 - 碳低介电常数膜。

公开(公告)号：US06602806B1

公开(公告)日：2003-08-05

申请号：US09632668

申请日：2000-08-07

申请人： Li-Qun Xia ,  Fabrice Geiger ,  Frederic Gaillard ,  Ellie Yieh ,  Tian H. Lim

发明人： Li-Qun Xia ,  Fabrice Geiger ,  Frederic Gaillard ,  Ellie Yieh ,  Tian H. Lim

IPC分类号： H01L2131

CPC分类号： H01L21/02126 ,  C23C16/401 ,  H01L21/02129 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/02312 ,  H01L21/0234 ,  H01L21/02362 ,  H01L21/31633

摘要： A method for providing a dielectric film having a low dielectric constant. The deposited film is particularly useful as an intermetal or premetal dielectric layer in an integrated circuit. The low dielectric constant film is a carbon-doped silicon oxide layer deposited from a thermal, as opposed to plasma, CVD process. The layer is deposited from a process gas of ozone and an organosilane precursor having at least one silicon-carbon (Si—C) bond. During the deposition process the wafer is heated to a temperature less than 250° C. and preferably to a temperature between 100-200° C. Enhancements to the process include adding Boron and/or Phosphorus dopants, two step deposition, and capping the post cured layer.

摘要翻译： 一种提供具有低介电常数的电介质膜的方法。 沉积膜特别可用作集成电路中的金属间或前金属介电层。 低介电常数膜是从与CVD等离子体相反的CVD法沉积的碳掺杂氧化硅层。 该层由臭氧的工艺气体和具有至少一个硅 - 碳（Si-C）键的有机硅烷前体沉积。 在沉积过程中，将晶片加热到低于250℃的温度，优选加热到100-200℃之间的温度。对该方法的增强包括加入硼和/或磷掺杂剂，两步沉积和封盖柱 固化层。

公开(公告)号：US08143174B2

公开(公告)日：2012-03-27

申请号：US12013232

申请日：2008-01-11

申请人： Li-Qun Xia ,  Frederic Gaillard ,  Ellie Yieh ,  Tian H. Lim

发明人： Li-Qun Xia ,  Frederic Gaillard ,  Ellie Yieh ,  Tian H. Lim

IPC分类号： H01L21/26

CPC分类号： H01L21/02126 ,  C23C16/0218 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02071 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02312 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02362 ,  H01L21/3105 ,  H01L21/3146 ,  H01L21/31604 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/76807 ,  H01L21/76826 ,  H01L21/76837 ,  Y10S438/931

摘要： A method for providing a dielectric film having enhanced adhesion and stability. The method includes a post deposition treatment that densifies the film in a reducing atmosphere to enhance stability if the film is to be cured ex-situ. The densification generally takes place in a reducing environment while heating the substrate. The densification treatment is particularly suitable for silicon-oxygen-carbon low dielectric constant films that have been deposited at low temperature.

摘要翻译： 一种用于提供具有增强的粘合性和稳定性的电介质膜的方法。 该方法包括在还原气氛中使膜致密化的后沉积处理，以提高如果该膜不原位固化的稳定性。 致密化通常在还原环境中进行，同时加热基底。 致密化处理特别适用于在低温下沉积的硅 - 氧 - 碳低介电常数膜。

公开(公告)号：US06635575B1

公开(公告)日：2003-10-21

申请号：US09633196

申请日：2000-08-07

申请人： Li-Qun Xia ,  Frederic Gaillard ,  Ellie Yieh ,  Tian H. Lim

发明人： Li-Qun Xia ,  Frederic Gaillard ,  Ellie Yieh ,  Tian H. Lim

IPC分类号： H01L21302

CPC分类号： H01L21/02126 ,  C23C16/0245 ,  C23C16/401 ,  C23C16/56 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02312 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02362 ,  H01L21/3146 ,  H01L21/31604 ,  H01L21/31612

摘要： A method for providing a dielectric film having enhanced adhesion and stability. Pre-deposition, post deposition and post cure treatments enhance adhesion of the dielectric film to an underlying substrate and overlying cap layer. The enhanced film is particularly useful as an intermetal or premetal dielectric layer in an integrated circuit. A pre-deposition treatment process with atomic hydrogen enhances film adhesion by reducing weakly bound oxides on the surface of the substrate. A post-deposition densification process in a reducing atmosphere enhances stability if the film is to be cured ex-situ. In a preferred embodiment, the layer a low dielectric constant film deposited from a process gas of ozone and an organosilane precursor having at least one silicon-carbon (Si—C) bond.

摘要翻译： 一种用于提供具有增强的粘合性和稳定性的电介质膜的方法。 预沉积，后沉积和后固化处理增强了介电膜对底层基底和覆盖层的粘附。 增强膜在集成电路中作为金属间或前金属介质层是特别有用的。 具有原子氢的预沉积处理方法通过减少衬底表面上的弱结合氧化物来增强膜的粘附性。 在还原气氛中的沉积后致密化过程如果要非原位固化，则可提高稳定性。 在优选实施方案中，该层由臭氧的工艺气体沉积的低介电常数膜和具有至少一个硅 - 碳（Si-C）键的有机硅烷前体。

公开(公告)号：US06486061B1

公开(公告)日：2002-11-26

申请号：US09632669

申请日：2000-08-07

申请人： Li-Qun Xia ,  Frederic Gaillard ,  Ellie Yieh ,  Tian H. Lim

发明人： Li-Qun Xia ,  Frederic Gaillard ,  Ellie Yieh ,  Tian H. Lim

IPC分类号： H01L2144

CPC分类号： H01L21/02126 ,  C23C16/0218 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02071 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02312 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02362 ,  H01L21/3105 ,  H01L21/3146 ,  H01L21/31604 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/76807 ,  H01L21/76826 ,  H01L21/76837 ,  Y10S438/931

摘要： A method for providing a dielectric film having enhanced adhesion and stability. The method includes a post deposition treatment that densifies the film in a reducing atmosphere to enhance stability if the film is to be cured ex-situ. The densification generally takes place in a reducing environment while heating the substrate. The densification treatment is particularly suitable for silicon-oxygen-carbon low dielectric constant films that have been deposited at low temperature.

摘要翻译： 一种用于提供具有增强的粘合性和稳定性的电介质膜的方法。 该方法包括在还原气氛中使膜致密化的后沉积处理，以提高如果该膜不原位固化的稳定性。 致密化通常在还原环境中进行，同时加热基底。 致密化处理特别适用于在低温下沉积的硅 - 氧 - 碳低介电常数膜。

公开(公告)号：US06858923B2

公开(公告)日：2005-02-22

申请号：US10293096

申请日：2002-11-12

申请人： Li-Qun Xia ,  Frederic Gaillard ,  Ellie Yieh ,  Tian H. Lim

发明人： Li-Qun Xia ,  Frederic Gaillard ,  Ellie Yieh ,  Tian H. Lim

IPC分类号： C23C16/02 ,  C23C16/40 ,  C23C16/56 ,  H01L21/3105 ,  H01L21/314 ,  H01L21/316 ,  H01L23/02

CPC分类号： H01L21/02126 ,  C23C16/0218 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02071 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02312 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02362 ,  H01L21/3105 ,  H01L21/3146 ,  H01L21/31604 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/76807 ,  H01L21/76826 ,  H01L21/76837 ,  Y10S438/931

摘要： A method for providing a dielectric film having enhanced adhesion and stability. The method includes a post deposition treatment that densifies the film in a reducing atmosphere to enhance stability if the film is to be cured ex-situ. The densification generally takes place in a reducing environment while heating the substrate. The densification treatment is particularly suitable for silicon-oxygen-carbon low dielectric constant films that have been deposited at low temperature.

摘要翻译： 一种用于提供具有增强的粘合性和稳定性的电介质膜的方法。 该方法包括在还原气氛中使膜致密化的后沉积处理，以提高如果该膜不原位固化的稳定性。 致密化通常在还原环境中进行，同时加热基底。 致密化处理特别适用于在低温下沉积的硅 - 氧 - 碳低介电常数膜。

公开(公告)号：US06528116B1

公开(公告)日：2003-03-04

申请号：US09633798

申请日：2000-08-07

申请人： Himansu Pokharna ,  Li-Qun Xia ,  Tian H. Lim

发明人： Himansu Pokharna ,  Li-Qun Xia ,  Tian H. Lim

IPC分类号： C23C1640

CPC分类号： C23C16/45572 ,  C23C16/401 ,  C23C16/4411 ,  C23C16/455 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02208 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02312 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02362 ,  H01L21/31612 ,  H01L21/31633

摘要： An apparatus and method for depositing thin films. The apparatus generally comprises a process chamber having one or more walls and a lid and two heat exchangers. A first heat exchanger is coupled to the walls and a second heat exchanger is coupled to the lid. The two heat exchangers are configured to provide separate temperature control of the walls and lid. Separate control of the lid and wall temperatures inhibits reaction of the organosilane within the lid while optimizing a reaction within the chamber. The apparatus implements a method, in which a process gas comprising ozone and an organosilane are admitted through the into a processing while a substrate is heated to form a carbon-doped silicon oxide layer over the substrate. During deposition, the lid is kept cooler than the walls.

摘要翻译： 一种用于沉积薄膜的设备和方法。 该装置通常包括具有一个或多个壁和盖和两个热交换器的处理室。 第一热交换器耦合到壁并且第二热交换器联接到盖。 两个热交换器被配置为提供对壁和盖的单独的温度控制。 单独控制盖子和壁温度可以抑制盖子内的有机硅烷的反应，同时优化室内的反应。 该装置实现了一种方法，其中包括臭氧和有机硅烷的处理气体通过加热进入处理，同时加热基板以在基板上形成碳掺杂的氧化硅层。 在沉积过程中，盖子比墙壁保持冷却。