发明授权
- 专利标题: Methods for reducing mask erosion during plasma etching
- 专利标题(中): 在等离子体蚀刻期间减少掩模侵蚀的方法
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申请号: US09610303申请日: 2000-07-05
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公开(公告)号: US06489245B1公开(公告)日: 2002-12-03
- 发明人: Jaroslaw W. Winniczek , Vahid Vahedi
- 申请人: Jaroslaw W. Winniczek , Vahid Vahedi
- 主分类号: H01L21302
- IPC分类号: H01L21302
摘要:
A method for reducing erosion of a mask while etching a feature in a first layer underlying the mask is disclosed. The first layer is disposed on a substrate, with the substrate being positioned on a chuck within in a plasma processing chamber. The method includes flowing an etchant source gas into the plasma processing chamber and forming a plasma from the etchant source gas. The method further includes pulsing an RF power source at a predefined pulse frequency to provide pulsed RF power to the chuck. The pulsed RF power has a first frequency and alternates between a high power cycle and a low power cycle at the pulse frequency. The pulse frequency is selected to be sufficiently low to cause polymer to be deposited on the mask during the low power cycle.