发明授权
- 专利标题: Method of forming an NPN device
- 专利标题(中): 形成NPN器件的方法
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申请号: US09782820申请日: 2001-02-12
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公开(公告)号: US06492237B2公开(公告)日: 2002-12-10
- 发明人: Alexander Kalnitsky , Sang Hoon Park , Robert F. Scheer
- 申请人: Alexander Kalnitsky , Sang Hoon Park , Robert F. Scheer
- 主分类号: H01L21331
- IPC分类号: H01L21331
摘要:
A method of forming an NPN semiconductor device includes the steps of forming a collector region within a substrate, forming a base region over the collector region, and forming an oxide-nitride-oxide stack over the base region. Once these three structures are formed, an opening is created through the oxide-nitride-oxide stack to expose the top surface of the base region. Then, a doped polysilicon material is used to fill the opening and make electrical contact to the base region. The use of the oxide-nitride-oxide stack with appropriate etching of the opening eliminates the exposure of the base region to reactive ion etch environment typical of prior art methods for forming NPN semiconductor devices. As an option, after the opening of the oxide-nitride-oxide stack is formed, a local oxidation of silicon (LOCOS) and etched can be preformed to create oxide spacers to line the opening wall above the base region.
公开/授权文献
- US20020109208A1 Method of forming an NPN device 公开/授权日:2002-08-15