发明授权
- 专利标题: Method of fabricating damascene metal wiring
- 专利标题(中): 制造镶嵌金属布线的方法
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申请号: US09447466申请日: 1999-11-22
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公开(公告)号: US06492260B1公开(公告)日: 2002-12-10
- 发明人: Young-wug Kim , Kyung-tae Lee
- 申请人: Young-wug Kim , Kyung-tae Lee
- 优先权: KR98-52515 19981202
- 主分类号: H01L214763
- IPC分类号: H01L214763
摘要:
A method of forming damascene wiring without dishing and erosion employs a dummy layer to slow or delay polishing in selected regions and thereby prevent dishing and erosion of the damascene wiring. The dummy layer is above wide damascene regions and areas containing closely packed damascene regions. Therefore, non-uniform sheet resistance of the damascene metal wiring and electro-migration due to an increase in the local current density of the metal wiring can be prevented.
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