A semiconductor device (20) is formed on a substrate (21) that has first and second well regions (25, 26) formed at a surface (18) of the substrate. A control electrode (34) extends over the surface to activate a first channel (42) with a control signal (V14) for routing a current (IN) from a first node (13) of the semiconductor device to an edge (43) of the first well region. The control signal further activates a second channel (46) for routing the current from an edge (45) of the second well region to a second node (15) of the semiconductor device.