发明授权
- 专利标题: Method for appraising the condition of a semiconductor polishing cloth
- 专利标题(中): 评估半导体抛光布条件的方法
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申请号: US09266051申请日: 1999-03-10
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公开(公告)号: US06495465B2公开(公告)日: 2002-12-17
- 发明人: Yuichi Nakayoshi , Naoki Yamada
- 申请人: Yuichi Nakayoshi , Naoki Yamada
- 优先权: JP10-057992 19980310
- 主分类号: H01L21302
- IPC分类号: H01L21302
摘要:
The present invention provides a method for appraising the condition of a polishing cloth, and a method for manufacturing semiconductor wafers employing the disclosed appraisal method, allowing acceptably low light point defect numbers of semiconductor wafers to be maintained. The disclosed method comprises polishing the semiconductor wafer using a polishing cloth, washing the wafer, and drying the wafer. The size of particles comprising light point defects is chosen, and the number of light point defects on the semiconductor wafer is counted. Typically, the diameter of particles comprising light point defects is set as 0.12 &mgr;m or greater. The polishing cloth is exchanged when the number of light point defects counted exceeds a prescribed number.
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