发明授权
- 专利标题: Chip crack stop design for semiconductor chips
- 专利标题(中): 半导体芯片的芯片裂纹停止设计
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申请号: US09655461申请日: 2000-09-05
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公开(公告)号: US06495918B1公开(公告)日: 2002-12-17
- 发明人: Axel Christoph Brintzinger
- 申请人: Axel Christoph Brintzinger
- 主分类号: H01L2348
- IPC分类号: H01L2348
摘要:
A semiconductor chip, in accordance with the present invention, includes a substrate and a crack stop structure. The crack structure includes a first conductive line disposed over the substrate and at least two first contacts connected to the substrate and to the first conductive line. The at least two first contacts are spaced apart from each other and extend longitudinally along a length of the first conductive line. A second conductive line is disposed over a portion of the first conductive line, and at least two second contacts are connected to the first conductive line and the second conductive line. The at least two second contacts are spaced apart from each other and extend longitudinally along a length of the second conductive line.
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