Post-in-crown capacitor and method of manufacture

发明授权

US06496352B2 Post-in-crown capacitor and method of manufacture 有权

标题翻译：后置电容器及其制造方法

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专利标题： Post-in-crown capacitor and method of manufacture
专利标题（中）： 后置电容器及其制造方法
申请号： US09335348

申请日： 1999-06-17
公开(公告)号： US06496352B2

公开(公告)日： 2002-12-17
发明人: Darius L. Crenshaw , William F. Richardson , Rick L. Wise
申请人： Darius L. Crenshaw , William F. Richardson , Rick L. Wise
主分类号： H01G4005
IPC分类号： H01G4005

Post-in-crown capacitor and method of manufacture

摘要：

A post-in-crown capacitor is disclosed. The post-in-crown capacitor (60) includes a crown (44) coupled to a conductive via (20). A post (48) is disposed within the crown (44) and a capacitor insulation layer (50) is formed outwardly from the crown (44) and the post (48). A capacitor plate layer (52) is then formed outwardly from the capacitor insulation layer (50).

摘要（中）：

公开了一种后置电容器。冠状后电容器（60）包括联接到导电通路（20）的表冠（44）。柱（48）设置在表冠（44）内，并且从表冠（44）和柱（48）向外形成电容器绝缘层（50）。然后从电容器绝缘层（50）向外形成电容器板层（52）。

公开/授权文献

US20020057548A1 POST-IN-CROWN CAPACITOR AND METHOD OF MANUFACTURE 公开/授权日：2002-05-16

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