发明授权
US06496749B1 Semiconductor producing apparatus and temperature control method therefor 有权
半导体制造装置及其温度控制方法

  • 专利标题: Semiconductor producing apparatus and temperature control method therefor
  • 专利标题(中): 半导体制造装置及其温度控制方法
  • 申请号: US09413467
    申请日: 1999-10-06
  • 公开(公告)号: US06496749B1
    公开(公告)日: 2002-12-17
  • 发明人: Hideto YamaguchiKazuo TanakaKenzo Urabe
  • 申请人: Hideto YamaguchiKazuo TanakaKenzo Urabe
  • 优先权: JP10-285426 19981007; JP11-282197 19991001
  • 主分类号: G06F1900
  • IPC分类号: G06F1900
Semiconductor producing apparatus and temperature control method therefor
摘要:
A semiconductor producing apparatus is capable of quickly and accurately changing a controlled variable to a target value to thereby make the controlled variable quickly follow the target value. Moreover, the controlled variable and target value can be adjusted automatically, thus improving the productivity of a process. The semiconductor producing apparatus includes a PID adjustment section to which a target value and a detected control value are inputted through an adder, a pattern generation section having an approximate function for calculating a pattern output and making it possible to change the pattern output in accordance wit parameter values of the approximate function, and a switcher for switching between an output including at least an output of the pattern generation section and an output of the PID adjustment section to thereby generate an output.
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