Invention Grant
US06500772B2 Methods and materials for depositing films on semiconductor substrates
失效
用于在半导体衬底上沉积膜的方法和材料
- Patent Title: Methods and materials for depositing films on semiconductor substrates
- Patent Title (中): 用于在半导体衬底上沉积膜的方法和材料
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Application No.: US09757072Application Date: 2001-01-08
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Publication No.: US06500772B2Publication Date: 2002-12-31
- Inventor: Ashima B. Chakravarti , Richard A. Conti , Chester Dziobkowski , Thomas Ivers , Paul Jamison , Frank Liucci
- Applicant: Ashima B. Chakravarti , Richard A. Conti , Chester Dziobkowski , Thomas Ivers , Paul Jamison , Frank Liucci
- Main IPC: H01L2131
- IPC: H01L2131
Abstract:
A method of depositing a film on a substrate, comprising placing the substrate in the presence of plasma energy, and contacting the substrate with a reactive gas component comprising a compound of the formula (R—NH)4−nSiXn, wherein R is an alkyl group, n is 1, 2, or 3, and X is selected from hydrogen or the halogens. The reactive gas composition may further comprise an oxidizer and/or a reducing agent.
Public/Granted literature
- US20020090835A1 Methods and materials for depositing films on semiconductor substrates Public/Granted day:2002-07-11
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