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公开(公告)号:US06500772B2
公开(公告)日:2002-12-31
申请号:US09757072
申请日:2001-01-08
申请人: Ashima B. Chakravarti , Richard A. Conti , Chester Dziobkowski , Thomas Ivers , Paul Jamison , Frank Liucci
发明人: Ashima B. Chakravarti , Richard A. Conti , Chester Dziobkowski , Thomas Ivers , Paul Jamison , Frank Liucci
IPC分类号: H01L2131
CPC分类号: H01L21/02126 , C23C16/30 , H01L21/02167 , H01L21/02222 , H01L21/02274 , H01L21/0332 , H01L21/3145 , H01L21/31608 , H01L21/3185
摘要: A method of depositing a film on a substrate, comprising placing the substrate in the presence of plasma energy, and contacting the substrate with a reactive gas component comprising a compound of the formula (R—NH)4−nSiXn, wherein R is an alkyl group, n is 1, 2, or 3, and X is selected from hydrogen or the halogens. The reactive gas composition may further comprise an oxidizer and/or a reducing agent.
摘要翻译: 一种在衬底上沉积膜的方法,包括在存在等离子体能量的情况下放置衬底,并使衬底与包含式(R-NH)4-nSiXn的化合物的反应性气体组分接触,其中R是烷基 基团,n为1,2或3,并且X选自氢或卤素。 反应性气体组合物还可以包含氧化剂和/或还原剂。