发明授权
US06500772B2 Methods and materials for depositing films on semiconductor substrates
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用于在半导体衬底上沉积膜的方法和材料
- 专利标题: Methods and materials for depositing films on semiconductor substrates
- 专利标题(中): 用于在半导体衬底上沉积膜的方法和材料
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申请号: US09757072申请日: 2001-01-08
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公开(公告)号: US06500772B2公开(公告)日: 2002-12-31
- 发明人: Ashima B. Chakravarti , Richard A. Conti , Chester Dziobkowski , Thomas Ivers , Paul Jamison , Frank Liucci
- 申请人: Ashima B. Chakravarti , Richard A. Conti , Chester Dziobkowski , Thomas Ivers , Paul Jamison , Frank Liucci
- 主分类号: H01L2131
- IPC分类号: H01L2131
摘要:
A method of depositing a film on a substrate, comprising placing the substrate in the presence of plasma energy, and contacting the substrate with a reactive gas component comprising a compound of the formula (R—NH)4−nSiXn, wherein R is an alkyl group, n is 1, 2, or 3, and X is selected from hydrogen or the halogens. The reactive gas composition may further comprise an oxidizer and/or a reducing agent.
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