发明授权
US06500772B2 Methods and materials for depositing films on semiconductor substrates 失效
用于在半导体衬底上沉积膜的方法和材料

Methods and materials for depositing films on semiconductor substrates
摘要:
A method of depositing a film on a substrate, comprising placing the substrate in the presence of plasma energy, and contacting the substrate with a reactive gas component comprising a compound of the formula (R—NH)4−nSiXn, wherein R is an alkyl group, n is 1, 2, or 3, and X is selected from hydrogen or the halogens. The reactive gas composition may further comprise an oxidizer and/or a reducing agent.
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