发明授权
US06503668B2 Phase shift mask blank, phase shift mask, and method of manufacture
有权
相移掩模空白，相移掩模和制造方法
- 专利标题： Phase shift mask blank, phase shift mask, and method of manufacture
- 专利标题（中）： 相移掩模空白，相移掩模和制造方法
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申请号： US09757615申请日： 2001-01-11
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公开(公告)号： US06503668B2公开(公告)日： 2003-01-07
- 发明人: Yukio Inazuki , Hideo Kaneko , Tamotsu Maruyama , Satoshi Okazaki
- 申请人： Yukio Inazuki , Hideo Kaneko , Tamotsu Maruyama , Satoshi Okazaki
- 优先权： JP2000-003344 20000112; JP2000-309407 20001010
- 主分类号： G03F900
- IPC分类号： G03F900
摘要：
A phase shift mask blank has a phase shift film of MoSiOC or MoSiONC on a transparent substrate, and optionally a chromium-based light-shielding film, a chromium-based antireflection film or a multilayer combination of both on the phase shift film. A manufacture method involving depositing the MoSi base phase shift film by a reactive sputtering technique using a sputtering gas containing carbon dioxide produces a phase shift mask blank and phase shift mask of quality, with advantages of in-plane uniformity and easy control during manufacture.