发明授权
- 专利标题: Passivation layer and process for semiconductor devices
- 专利标题(中): 半导体器件的钝化层和工艺
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申请号: US09876538申请日: 2001-06-06
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公开(公告)号: US06504235B2公开(公告)日: 2003-01-07
- 发明人: Adele E. Schmitz , Julia J. Brown
- 申请人: Adele E. Schmitz , Julia J. Brown
- 主分类号: H01L2358
- IPC分类号: H01L2358
摘要:
A semiconductor passivation technique uses a plasma enhanced chemical vapor deposition (PECVD) process to produce a silicon-rich nitride film as a passivation layer on a Group III-V semiconductor device. The silicon-rich film has a nitrogen to silicon ratio of about 0.7, has a relatively high index of refraction of, for example, approximately 2.4, is compressively stressed, and is very low in hydrogen and oxygen content.
公开/授权文献
- US20010028100A1 Passivation layer and process for semiconductor devices 公开/授权日:2001-10-11