A solid-state imaging device having contacts for a charge sweeping component or the like, with which increases in dark current can be suppressed while increases in contact resistance and the production of alloy spikes can be prevented, and a method for manufacturing this device. A solid-state imaging device has a charge accumulator for producing and accumulating signal charges when light is received, and a charge transfer component for transferring these signal charges, including a conductive layer 18 formed on a substrate 10, such as a silicon layer or metal wiring; an insulating film 21 formed over the conductive layer 18; an opening CH formed over the insulating film 21 and leading to the conductive layer 18; and a wiring layer 34 composed of aluminum containing copper in an amount between 0.4 and 5 wt %, formed at least inside the opening CH contiguously with the surface of the conductive layer 18. The wiring layer 34 is formed by coherent sputtering, and the treatment steps following the formation of the wiring layer 34 are carried out at a temperature of 350° C. or lower. Selected Figure: FIG. 3