发明授权
US06507532B1 Semiconductor memory device having row-related circuit operating at high speed
失效
具有行相关电路的半导体存储器件以高速工作
- 专利标题: Semiconductor memory device having row-related circuit operating at high speed
- 专利标题(中): 具有行相关电路的半导体存储器件以高速工作
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申请号: US09722687申请日: 2000-11-28
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公开(公告)号: US06507532B1公开(公告)日: 2003-01-14
- 发明人: Takeshi Fujino , Kazunari Inoue , Akira Yamazaki , Kazutami Arimoto
- 申请人: Takeshi Fujino , Kazunari Inoue , Akira Yamazaki , Kazutami Arimoto
- 优先权: JP11-339174 19991130
- 主分类号: G11C800
- IPC分类号: G11C800
摘要:
A central row-related control circuit transmits an internal row address signal to each memory sub block in banks of memory mats asynchronously with an external clock signal, and latches a block selection signal for specifying a memory sub block synchronously with an internal clock signal for one clock cycle period for transmission to each memory sub block. A spare determination circuit performs spare determination asynchronously with the clock signal. A semiconductor memory device easily adaptable to bank expansion without increase of the chip area and capable of implementing a high speed access can be provided.
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