发明授权
US06507532B1 Semiconductor memory device having row-related circuit operating at high speed 失效
具有行相关电路的半导体存储器件以高速工作

Semiconductor memory device having row-related circuit operating at high speed
摘要:
A central row-related control circuit transmits an internal row address signal to each memory sub block in banks of memory mats asynchronously with an external clock signal, and latches a block selection signal for specifying a memory sub block synchronously with an internal clock signal for one clock cycle period for transmission to each memory sub block. A spare determination circuit performs spare determination asynchronously with the clock signal. A semiconductor memory device easily adaptable to bank expansion without increase of the chip area and capable of implementing a high speed access can be provided.
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