- 专利标题： Removal of photoresist and photoresist residue from semiconductors using supercritical carbon dioxide process
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申请号： US09389788申请日： 1999-09-03
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公开(公告)号： US06509141B2公开(公告)日： 2003-01-21
- 发明人: William H. Mullee
- 申请人： William H. Mullee
- 主分类号： G03F742
- IPC分类号： G03F742
摘要：
A method of removing a photoresist or a photoresist residue from a semiconductor substrate is disclosed. The semiconductor substrate with the photoresist or the photoresist residue on a surface of the semiconductor substrate is placed within a pressure chamber. The pressure chamber is then pressurized. Supercritical carbon dioxide and a stripper chemical are introduced to the pressure chamber. The supercritical carbon dioxide and the stripper chemical are maintained in contact with the photoresist or the photoresist residue until the photoresist or the photoresist residue is removed from the semiconductor substrate. The pressure chamber is then flushed and vented.
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