公开(公告)号：US06660875B1

公开(公告)日：2003-12-09

申请号：US09327975

申请日：1999-06-08

申请人： William H. Mullee

发明人： William H. Mullee

IPC分类号： C07F708

CPC分类号： B01J47/026 ,  B01J39/05 ,  B01J41/05 ,  B01J47/00

摘要： A method of removing inorganic contamination from dielectric condensate precursor fluids and silicate esters, such as tetraethylorthosilicate (TEOS), methyltriethoxyorthosilicate (MTEOS), hydrogen silsesquioxane (HSQ), methyl silsesquioxane (MSQ), polyarylene ether, benzocyclobutene (BCB), or OSG, includes obtaining a commercial grade fluid having up to 10,000 ppb individual metallic contaminants; converting the sodium form of one or more macroporous ion exchange resin beds to a hydrogen form; converting the chloride form of one or more macroporous ion exchange resin beds to a hydroxide form; drying the macroporous ion exchange resin beds to remove substantially all water from the ion exchange resin beds; passing fluids through the ion exchange resin beds one or more times by recirculating all or a portion of the fluid to obtain a purified fluid having less than 1 ppb of individual metallic contaminants, less than 10 ppb of boron contaminants, and less than 1 ppb of chloride contaminants; and collecting the purified fluid product within a container to prevent the subsequent addition of contaminants.

摘要翻译： 例如原硅酸四乙酯（TEOS），甲基三乙氧基原硅酸盐（MTEOS），氢倍半硅氧烷（HSQ），甲基倍半硅氧烷（MSQ），聚芳醚，苯并环丁烯（BCB）或OSG等的电介质凝析物前体流体和硅酸酯的去除无机污染物的方法， 包括获得具有高达10,000ppb个别金属污染物的商业级流体; 将一种或多种大孔离子交换树脂床的钠形式转化为氢形式; 将一种或多种大孔离子交换树脂床的氯化物形式转化成氢氧化物形式; 干燥大孔离子交换树脂床，以从离子交换树脂床中基本上除去所有的水; 将流体通过循环全部或部分流体使流体通过离子交换树脂床一次或多次，以获得具有小于1ppb的单独的金属污染物，小于10ppb的硼污染物和小于1ppb的 氯化物污染物; 并在容器内收集纯化的流体产品以防止随后添加污染物。

公开(公告)号：US06277753B1

公开(公告)日：2001-08-21

申请号：US09407628

申请日：1999-09-28

申请人： William H. Mullee ,  Marc de Leeuwe ,  Glenn A. Roberson, Jr.

发明人： William H. Mullee ,  Marc de Leeuwe ,  Glenn A. Roberson, Jr.

IPC分类号： H01L2100

CPC分类号： H01L21/02052 ,  B08B7/0021

摘要： A method of removing Chemical Mechanical Polishing (CMP) residue from a semiconductor substrate is disclosed. The semiconductor substrate with the CMP residue on a surface is placed within a pressure chamber. The pressure chamber is then pressurized. Supercritical carbon dioxide and a solvent are introduced into the pressure chamber. The supercritical carbon dioxide and the chemical are maintained in contact with the semiconductor substrate until the CMP residue is removed from the semiconductor substrate. The pressure chamber is then flushed and vented.

摘要翻译： 公开了从半导体衬底去除化学机械抛光（CMP）残留物的方法。 在表面上具有CMP残留物的半导体衬底置于压力室内。 然后将压力室加压。 将超临界二氧化碳和溶剂引入压力室。 超临界二氧化碳和化学品保持与半导体衬底接触，直到从半导体衬底除去CMP残渣。 然后将压力室冲洗并排空。

公开(公告)号：US06871656B2

公开(公告)日：2005-03-29

申请号：US10255822

申请日：2002-09-25

申请人： William H. Mullee

发明人： William H. Mullee

IPC分类号： G03F7/42 ,  H01L21/311 ,  B08B3/08

CPC分类号： G03F7/422 ,  H01L21/31133 ,  Y10S134/902

摘要： A method of removing a photoresist or a photoresist residue from a semiconductor substrate is disclosed. The semiconductor substrate with the photoresist or the photoresist residue on a surface of the semiconductor substrate is placed within a pressure chamber. The pressure chamber is then pressurized. Supercritical carbon dioxide and a stripper chemical are introduced to the pressure chamber. The supercritical carbon dioxide and the stripper chemical are maintained in contact with the photoresist or the photoresist residue until the photoresist or the photoresist residue is removed from the semiconductor substrate. The pressure chamber is then flushed and vented.

摘要翻译： 公开了从半导体衬底去除光致抗蚀剂或光致抗蚀剂残留物的方法。 在半导体衬底的表面上具有光致抗蚀剂或光致抗蚀剂残留物的半导体衬底置于压力室内。 然后将压力室加压。 将超临界二氧化碳和汽提化学物质引入压力室。 超临界二氧化碳和汽提化学物质保持与光致抗蚀剂或光致抗蚀剂残留物接触，直到从半导体衬底去除光致抗蚀剂或光致抗蚀剂残留物。 然后将压力室冲洗并排空。

公开(公告)号：US06500605B1

公开(公告)日：2002-12-31

申请号：US09697227

申请日：2000-10-25

申请人： William H. Mullee ,  Maximilian A. Biberger ,  Paul E. Schilling

发明人： William H. Mullee ,  Maximilian A. Biberger ,  Paul E. Schilling

IPC分类号： G03F742

CPC分类号： H01L21/02071 ,  B08B7/0021 ,  G03F7/422 ,  G03F7/425 ,  H01L21/02063 ,  H01L21/02101 ,  H01L21/31133

摘要： A method of removing photoresist and residue from a substrate begins by maintaining supercritical carbon dioxide, an amine, and a solvent in contact with the substrate so that the amine and the solvent at least partially dissolve the photoresist and the residue. Preferably, the amine is a tertiary amine. Preferably, the solvent is selected from the group consisting of DMSO, EC, NMP, acetyl acetone, BLO, acetic acid, DMAC, PC, and a mixture thereof. Next, the photoresist and the residue are removed from the vicinity of the substrate. Preferably, the method continues with a rinsing step in which the substrate is rinsed in the supercritical carbon dioxide and a rinse agent. Preferably, the rinse agent is selected from the group consisting of water, alcohol, a mixture thereof, and acetone. In an alternative embodiment, the amine and the solvent are replaced with an aqueous fluoride.

摘要翻译： 从基材上除去光致抗蚀剂和残留物的方法开始于保持超临界二氧化碳，胺和与基材接触的溶剂，使得胺和溶剂至少部分地溶解光致抗蚀剂和残余物。 优选地，胺是叔胺。 优选地，溶剂选自DMSO，EC，NMP，乙酰丙酮，BLO，乙酸，DMAC，PC及其混合物。 接下来，从基板附近去除光致抗蚀剂和残留物。 优选地，该方法继续进行漂洗步骤，其中在超临界二氧化碳和漂洗剂中漂洗基材。 优选地，漂洗剂选自水，醇，其混合物和丙酮。 在替代实施方案中，胺和溶剂被氟化物水溶液代替。

公开(公告)号：US07329354B2

公开(公告)日：2008-02-12

申请号：US10231547

申请日：2002-08-29

申请人： William H. Mullee

发明人： William H. Mullee

IPC分类号： B01D15/04

CPC分类号： B01J47/00 ,  B01J39/05 ,  B01J41/05 ,  B01J47/026 ,  B01J47/14

摘要： A chemical distribution system having improved organic solvent fluid purity and consistency includes a vessel containing ion-exchange media positioned within a fluid flow pathway such that the organic solvent fluid passes through the ion-exchange media, thereby effecting removal of undesired impurities. Different embodiments of the invention position the vessel at varying locations within the fluid flow pathway. The chemical distribution system also preferably includes a return chemical flow pathway that recirculates purified organic solvent fluid through the ion-exchange media-containing vessel and thereby enables the system operator to conduct incremental adjustment of the solvent purity until a desired overall purity is attained.

摘要翻译： 具有改进的有机溶剂流体纯度和稠度的化学分配系统包括容纳位于流体流动路径内的离子交换介质的容器，使得有机溶剂流体通过离子交换介质，从而除去不需要的杂质。 本发明的不同实施例将容器定位在流体流动通路内的不同位置处。 化学分配系统还优选地包括返回化学流动路径，其将纯化的有机溶剂流体再循环通过含离子交换介质的容器，从而使得系统操作者能够进行溶剂纯度的增量调节，直到达到期望的全部纯度。

公开(公告)号：US06537916B2

公开(公告)日：2003-03-25

申请号：US10042486

申请日：2001-10-18

申请人： William H. Mullee ,  Marc de Leeuwe ,  Glenn A. Roberson, Jr.

发明人： William H. Mullee ,  Marc de Leeuwe ,  Glenn A. Roberson, Jr.

IPC分类号： H01L2100

CPC分类号： H01L21/02052 ,  B08B7/0021

摘要： A method of removing Chemical Mechanical Polishing (CMP) residue from a semiconductor substrate is disclosed. The semiconductor substrate with the CMP residue on a surface is placed within a pressure chamber. The pressure chamber is then pressurized. Supercritical carbon dioxide and a solvent are introduced into the pressure chamber. The supercritical carbon dioxide and the chemical are maintained in contact with the semiconductor substrate until the CMP residue is removed from the semiconductor substrate. The pressure chamber is then flushed and vented.

公开(公告)号：US06509141B2

公开(公告)日：2003-01-21

申请号：US09389788

申请日：1999-09-03

申请人： William H. Mullee

发明人： William H. Mullee

IPC分类号： G03F742

CPC分类号： G03F7/422 ,  H01L21/31133

摘要： A method of removing a photoresist or a photoresist residue from a semiconductor substrate is disclosed. The semiconductor substrate with the photoresist or the photoresist residue on a surface of the semiconductor substrate is placed within a pressure chamber. The pressure chamber is then pressurized. Supercritical carbon dioxide and a stripper chemical are introduced to the pressure chamber. The supercritical carbon dioxide and the stripper chemical are maintained in contact with the photoresist or the photoresist residue until the photoresist or the photoresist residue is removed from the semiconductor substrate. The pressure chamber is then flushed and vented.

公开(公告)号：US06306564B1

公开(公告)日：2001-10-23

申请号：US09085391

申请日：1998-05-27

申请人： William H. Mullee

发明人： William H. Mullee

IPC分类号： G03F742

CPC分类号： G03F7/422 ,  H01L21/31133

摘要： A commercially available solvent, such as a stripping chemical and/or an organic solvent, is supported by supercritical CO2 to remove a resist, its residue, and/or an organic contaminant off the surface of a semiconductor wafer. Supercritical CO2 has a high solvency which increases with pressure. The supercritical CO2 permits a tremendous reduction in reaction time and amount of chemical utilized for the resist removal process. In a preferred embodiment, the wafer is exposed to the CO2 and chemical mixture in a process chamber heated to a temperature of 20 to 80° C. at a pressure of 1050 to 6000 psig for a period of 10 seconds to 15 minutes.

摘要翻译： 市售的溶剂，例如汽提化学品和/或有机溶剂，由超临界CO 2负载以从半导体晶片的表面去除抗蚀剂，其残留物和/或有机污染物。 超临界二氧化碳具有较高的偿付能力，随压力而增加。 超临界CO2允许大大减少反应时间和用于抗蚀剂去除过程的化学物质量。 在优选实施例中，将晶片暴露于加热室中的二氧化碳和化学混合物，处理室的加热温度为20至80℃，压力为1050至6000psig，持续10秒至15分钟。

公开(公告)号：US07064070B2

公开(公告)日：2006-06-20

申请号：US10396612

申请日：2003-03-24

申请人： William H. Mullee ,  Marc de Leeuwe ,  Glenn A. Roberson, Jr. ,  Bentley J. Palmer

发明人： William H. Mullee ,  Marc de Leeuwe ,  Glenn A. Roberson, Jr. ,  Bentley J. Palmer

IPC分类号： H01L21/302

CPC分类号： B08B3/12 ,  B08B7/0021 ,  C11D11/0047 ,  H01L21/02074 ,  H01L21/02101

摘要： A method of post chemical mechanical polishing (CMP) cleaning to remove a CMP residue from a surface of an object is disclosed. The object is placed within a pressure chamber. The pressure chamber is pressurized. A supercritical carbon dioxide process is performed to remove a residual CMP residue from the surface of the object. The pressure chamber is vented.

摘要翻译： 公开了一种用于从物体表面去除CMP残留物的后化学机械抛光（CMP）清洁方法。 物体被放置在压力室内。 压力室被加压。 执行超临界二氧化碳过程以从物体的表面去除残留的CMP残余物。 压力室通风。

公开(公告)号：US5746993A

公开(公告)日：1998-05-05

申请号：US733277

申请日：1996-10-17

申请人： William H. Mullee

发明人： William H. Mullee

IPC分类号： C01C1/02 ,  C01C1/00

CPC分类号： C01C1/022

摘要： A process for obtaining an ultra-high purity aqueous ammonium hydroxide solution according to the invention includes the steps of reacting highly pure, typically electronics grade, ammonia (NH.sub.3) with ultrapure water (upw) under conditions effective to produce an ultra-high purity stream of aqueous ammonium hydroxide (NH.sub.4 OH) which is available for immediate use in a wide variety of applications especially those requiring high purity aqueous solutions of ammonium hydroxide.

摘要翻译： 根据本发明的获得超高纯度氢氧化铵水溶液的方法包括以下步骤：在有效产生超高纯度流的条件下，使高纯度（通常为电子级）的氨（NH 3）与超纯水（upw）反应 的氢氧化铵水溶液（NH4OH），可立即用于各种应用，特别是需要高纯度氢氧化铵水溶液的那些。