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US06511874B2 Integrated circuit structure comprising capacitor element and corresponding manufacturing process 有权
集成电路结构包括电容元件和相应的制造工艺

  • Patent Title: Integrated circuit structure comprising capacitor element and corresponding manufacturing process
  • Patent Title (中): 集成电路结构包括电容元件和相应的制造工艺
  • Application No.: US09912638
    Application Date: 2001-07-24
  • Publication No.: US06511874B2
    Publication Date: 2003-01-28
  • Inventor: Raffaele Zambrano
  • Applicant: Raffaele Zambrano
  • Priority: EP98830597 19981012
  • Main IPC: H01L218242
  • IPC: H01L218242
Integrated circuit structure comprising capacitor element and corresponding manufacturing process
Abstract:
A circuit structure for semiconductor devices which are integrated on a semiconductor layer is provided. The structure comprises at least one MOS device and at least one capacitor element that has a bottom and a top electrode. The MOS device has conduction terminals formed in the semiconductor layer, as well as a control terminal covered with an overlying insulating layer of unreflowed oxide. The capacitor element is formed on the unreflowed oxide layer.
Abstract(Chinese):

提供集成在半导体层上的半导体器件的电路结构。 该结构包括至少一个MOS器件和具有底部电极和顶部电极的至少一个电容器元件。 MOS器件具有形成在半导体层中的导电端子，以及覆盖有未溢出氧化物的上覆绝缘层的控制端子。 电容器元件形成在未流动的氧化物层上。

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