发明授权
- 专利标题: Oxime derivatives and the use thereof as latent acids
- 专利标题(中): 肟衍生物及其作为潜伏酸的用途
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申请号: US09820115申请日: 2001-03-28
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公开(公告)号: US06512020B1公开(公告)日: 2003-01-28
- 发明人: Toshikage Asakura , Hitoshi Yamato , Masaki Ohwa , Jean-Luc Birbaum , Kurt Dietliker , Junichi Tanabe
- 申请人: Toshikage Asakura , Hitoshi Yamato , Masaki Ohwa , Jean-Luc Birbaum , Kurt Dietliker , Junichi Tanabe
- 优先权: EP99810273 19990331; EP99810287 19990407; EP99810779 19990830
- 主分类号: C08J328
- IPC分类号: C08J328
摘要:
Compounds of formula I, II and III, wherein wherein R1 is for example hydrogen, C1-C12alkyl, C3-C30cycloalkyl, C2-C12alkenyl, C4-C8cycloalkenyl, phenyl, which is unsubstituted or substituted, naphthyl, anthracyl or phenanthryl, unsubstituted or substituted, heteroaryl radical which is unsubstituted or substituted; wherein all radicals R1 with the exception of hydrogen can additionally be substituted by a group having a —O—C-bond or a —O—Si-bond which cleaves upon the action of an acid; R′1 is for example phenylene, naphthylene, diphenylene or oxydiphenylene, wherein these radicals are unsubstituted or substituted; R2 is halogen or C1-C10haloalkyl; R3 is for example C1-C18alkylsulfonyl, phenylsulfonyl, naphthylsulfonyl, anthracylsulfonyl or phenanthrylsulfonyl, wherein the groups are unsubstituted or substituted, or R3 is e.g. C2-C6haloalkanoyl, or halobenzoyl, R′3 is for example phenylenedisulfonyl, naphthylenedisulfonyl, diphenylenedisulfonyl, or oxydiphenylenedisulfonyl, wherein these radicals are unsubstituted or substituted, X is halogen; are especially suitable as photosensitive acid-donors in chemically amplified resist formulations.
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