- 专利标题: Charged beam exposure method and charged beam exposure apparatus
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申请号: US10075370申请日: 2002-02-15
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公开(公告)号: US06512237B2公开(公告)日: 2003-01-28
- 发明人: Tetsuro Nakasugi , Yuichiro Yamazaki , Hideaki Abe
- 申请人: Tetsuro Nakasugi , Yuichiro Yamazaki , Hideaki Abe
- 优先权: JP10-360714 19981218
- 主分类号: H01J37304
- IPC分类号: H01J37304
摘要:
A charged beam exposing method comprises a step of applying a voltage to a sample to thereby form an acceleration electric field on the sample, a step of accelerating an electron beam emitted from an electron gun and scanning an alignment mark formed on the sample with the electron beam, a step of detecting back-scattered electrons and secondary electrons, generated from the alignment mark, by means of a detector, a step of acquiring the position of the alignment mark based on a signal waveform detected, a step of eliminating or reducing the acceleration electric field by changing the applied voltage to the sample, and a step of exposing a pattern with the electron beam emitted from the electron gun based on information of the position of the alignment mark.
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