公开(公告)号：US06376136B1

公开(公告)日：2002-04-23

申请号：US09465932

申请日：1999-12-17

申请人： Tetsuro Nakasugi ,  Yuichiro Yamazaki ,  Hideaki Abe

发明人： Tetsuro Nakasugi ,  Yuichiro Yamazaki ,  Hideaki Abe

IPC分类号： G03F900

CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3045 ,  H01J2237/3175 ,  Y10S430/143

摘要： A charged beam exposing method comprises a step of applying a voltage to a sample to thereby form an acceleration electric field on the sample, a step of accelerating an electron beam emitted from an electron gun and scanning an alignment mark formed on the sample with the electron beam, a step of detecting back-scattered electrons and secondary electrons, generated from the alignment mark, by means of a detector, a step of acquiring the position of the alignment mark based on a signal waveform detected, a step of eliminating or reducing the acceleration electric field by changing the applied voltage to the sample, and a step of exposing a pattern with the electron beam emitted from the electron gun based on information of the position of the alignment mark.

摘要翻译： 带电束曝光方法包括对样品施加电压从而在样品上形成加速电场的步骤，加速从电子枪发射的电子束并用电子扫描样品上形成的对准标记的步骤 通过检测器检测从对准标记产生的反向散射电子和二次电子的步骤，基于检测到的信号波形获取对准标记的位置的步骤，消除或减少对准标记的步骤 通过改变向样品施加的电压的加速电场，以及基于对准标记的位置的信息，用电子枪发射的电子束曝光图案的步骤。

公开(公告)号：US06512237B2

公开(公告)日：2003-01-28

申请号：US10075370

申请日：2002-02-15

申请人： Tetsuro Nakasugi ,  Yuichiro Yamazaki ,  Hideaki Abe

发明人： Tetsuro Nakasugi ,  Yuichiro Yamazaki ,  Hideaki Abe

IPC分类号： H01J37304

CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3045 ,  H01J2237/3175 ,  Y10S430/143

摘要： A charged beam exposing method comprises a step of applying a voltage to a sample to thereby form an acceleration electric field on the sample, a step of accelerating an electron beam emitted from an electron gun and scanning an alignment mark formed on the sample with the electron beam, a step of detecting back-scattered electrons and secondary electrons, generated from the alignment mark, by means of a detector, a step of acquiring the position of the alignment mark based on a signal waveform detected, a step of eliminating or reducing the acceleration electric field by changing the applied voltage to the sample, and a step of exposing a pattern with the electron beam emitted from the electron gun based on information of the position of the alignment mark.

公开(公告)号：US08883373B2

公开(公告)日：2014-11-11

申请号：US13679396

申请日：2012-11-16

申请人： Akiko Mimotogi ,  Suigen Kyoh ,  Tetsuro Nakasugi

发明人： Akiko Mimotogi ,  Suigen Kyoh ,  Tetsuro Nakasugi

IPC分类号： G03F1/62 ,  G03F1/64

CPC分类号： G03F1/62

摘要： According to one embodiment, a method for manufacturing a photo mask, includes acquiring first data on respective shapes of a plurality of mask substrates, acquiring second data on respective shapes of a plurality of pellicles, and determining a combination of the mask substrate and the pellicle based on the first data and the second data.

摘要翻译： 根据一个实施例，一种制造光掩模的方法包括：获取关于多个掩模基板的各个形状的第一数据，获取关于多个防护薄膜的各自形状的第二数据，以及确定掩模基板和防护薄膜组件的组合 基于第一数据和第二数据。

公开(公告)号：US20140072668A1

公开(公告)日：2014-03-13

申请号：US13731617

申请日：2012-12-31

申请人： Ikuo YONEDA ,  Tetsuro Nakasugi

发明人： Ikuo YONEDA ,  Tetsuro Nakasugi

IPC分类号： B29C59/02

CPC分类号： B29C59/02 ,  B29C33/424 ,  G03F7/0002 ,  Y10T428/24488

摘要： According to one embodiment, a mold includes a base material, a pedestal portion and a pattern portion. The base material includes a first surface and a second surface. The pedestal portion protruded from the first surface of the base material and includes a side surface. The pattern portion is provided in the pedestal portion and includes an concave-convex pattern. The pedestal portion includes a first region and a second region. The first region is provided with the concave-convex pattern. The second region is provided between the first region and the side surface. The second region has maximum height equal to maximum height of the first region. The second region has a first height of the second region on the side surface side and a second height of the second region on the first region side. The first height is lower than the second height.

摘要翻译： 根据一个实施例，模具包括基底材料，基座部分和图案部分。 基材包括第一表面和第二表面。 所述基座部从所述基材的第一表面突出并且包括侧面。 图案部分设置在基座部分中并且包括凹凸图案。 基座部分包括第一区域和第二区域。 第一区域设置有凹凸图案。 第二区域设置在第一区域和侧面之间。 第二区域具有等于第一区域的最大高度的最大高度。 所述第二区域具有在所述第一区域侧上的所述第二区域的侧表面侧的第一高度和所述第二区域的第二高度。 第一个高度低于第二个高度。

公开(公告)号：US20130130157A1

公开(公告)日：2013-05-23

申请号：US13679396

申请日：2012-11-16

申请人： Akiko Mimotogi ,  Suigen Kyoh ,  Tetsuro Nakasugi

发明人： Akiko Mimotogi ,  Suigen Kyoh ,  Tetsuro Nakasugi

IPC分类号： G03F1/62

CPC分类号： G03F1/62

摘要： According to one embodiment, a method for manufacturing a photo mask, includes acquiring first data on respective shapes of a plurality of mask substrates, acquiring second data on respective shapes of a plurality of pellicles, and determining a combination of the mask substrate and the pellicle based on the first data and the second data.

摘要翻译： 根据一个实施例，一种制造光掩模的方法包括：获取关于多个掩模基板的各个形状的第一数据，获取关于多个防护薄膜的各自形状的第二数据，以及确定掩模基板和防护薄膜组件的组合 基于第一数据和第二数据。

公开(公告)号：US20130077066A1

公开(公告)日：2013-03-28

申请号：US13428519

申请日：2012-03-23

申请人： Ryoichi INANAMI ,  Tetsuro Nakasugi

发明人： Ryoichi INANAMI ,  Tetsuro Nakasugi

IPC分类号： G03B27/74

CPC分类号： G03F7/0002 ,  B82Y10/00 ,  B82Y40/00

摘要： According to one embodiment, a pattern forming apparatus includes a stage provided under a lower surface of a substrate, a probe provided above an upper surface of the substrate, a drive unit which drives at least one of the stage and the probe, a monitor/lithography unit connected to the probe, and a control unit which controls the drive unit and the monitor/lithography unit. The control unit is configured to change a relative position between the probe and the substrate, and form a first pattern in an area direct above a second pattern after detecting the first pattern in the substrate by the probe.

摘要翻译： 根据一个实施例，图案形成装置包括设置在基板的下表面下方的台，设置在基板的上表面上方的探针，驱动台和探针中的至少一个的驱动单元，监视器/ 连接到探针的光刻单元，以及控制驱动单元和监视器/光刻单元的控制单元。 控制单元被配置为改变探针和衬底之间的相对位置，并且在通过探针检测到衬底中的第一图案之后，在直接在第二图案之上的区域中形成第一图案。

公开(公告)号：US08180472B2

公开(公告)日：2012-05-15

申请号：US12497349

申请日：2009-07-02

申请人： Masayuki Hatano ,  Tetsuro Nakasugi

发明人： Masayuki Hatano ,  Tetsuro Nakasugi

IPC分类号： G06F19/00

CPC分类号： G05B19/41875 ,  G05B2219/31265 ,  G05B2219/32196 ,  Y02P90/22

摘要： A control method for a semiconductor manufacturing apparatus, comprising: generating, as log data, a history of operation states of the semiconductor manufacturing apparatus when a wafer is processed by the semiconductor manufacturing apparatus; specifying, based on the log data, processing results in which operation states of the semiconductor manufacturing apparatus are abnormal states out of processing results after the processing of the wafer processed by the semiconductor manufacturing apparatus as abnormal processing results; creating control data for the semiconductor manufacturing apparatus based on the processing results and the abnormal processing results; and controlling the processing by the semiconductor manufacturing apparatus using the control data.

摘要翻译： 一种半导体制造装置的控制方法，包括：当半导体制造装置处理晶片时，产生作为对数数据的半导体制造装置的工作状态的历史; 基于对数数据，指定在由半导体制造装置处理的晶片处理之后的处理结果中作为异常处理结果的半导体制造装置的操作状态为异常状态的处理结果; 基于处理结果和异常处理结果创建半导体制造装置的控制数据; 以及使用控制数据来控制半导体制造装置的处理。

公开(公告)号：US08118585B2

公开(公告)日：2012-02-21

申请号：US12882944

申请日：2010-09-15

申请人： Masayuki Hatano ,  Suigen Kyoh ,  Tetsuro Nakasugi

发明人： Masayuki Hatano ,  Suigen Kyoh ,  Tetsuro Nakasugi

IPC分类号： A01J21/00

CPC分类号： G03F7/0002 ,  B82Y10/00 ,  B82Y40/00 ,  G03F9/00

摘要： In one embodiment, a pattern formation method is disclosed. The method can place a liquid resin material on a workpiece substrate. The method can press a template against the resin material and measuring distance between a lower surface of a projection of the template and an upper surface of the workpiece substrate. The template includes a pattern formation region and a circumferential region around the pattern formation region. A pattern for circuit pattern formation is formed in the pattern formation region and the projection is formed in the circumferential region. The method can form a resin pattern by curing the resin material in a state of pressing the template. In addition, the method can separate the template from the resin pattern.

摘要翻译： 在一个实施例中，公开了图案形成方法。 该方法可以将液态树脂材料放置在工件基板上。 该方法可以将模板压靠树脂材料并测量模板的突起的下表面与工件基板的上表面之间的距离。 模板包括图案形成区域和围绕图案形成区域的周边区域。 在图案形成区域中形成用于电路图案形成的图案，并且在周向区域中形成突起。 该方法可以通过在压制模板的状态下固化树脂材料来形成树脂图案。 此外，该方法可以将模板与树脂图案分离。

公开(公告)号：US07202488B2

公开(公告)日：2007-04-10

申请号：US10948555

申请日：2004-09-24

申请人： Takumi Ota ,  Tetsuro Nakasugi

发明人： Takumi Ota ,  Tetsuro Nakasugi

IPC分类号： H01J37/302 ,  H01J37/30 ,  G03C5/00

CPC分类号： H01J37/304 ,  H01J37/153 ,  H01J2237/31754

摘要： A method of correcting deflection distortion includes dividing a deflection area to which a charged-particle beam is deflected into equal initial blocks as an initial setting, calculating an initial aberration amount for each of the initial blocks generated when the charged-particle beam is deflected, dividing the deflection area into main blocks in accordance with a change rate of the initial aberration amount; calculating a main aberration amount for each of the main blocks generated when the charged-particle beam is deflected, and calculating a correction value correcting a deflection distortion based on the main aberration amount.

摘要翻译： 校正偏转失真的方法包括将带电粒子束被偏转的偏转区域划分为相等的初始块作为初始设置，计算当带电粒子束偏转时产生的每个初始块的初始像差量， 根据初始像差量的变化率将偏转区域分成主块; 计算当带电粒子束偏转时产生的每个主要块的主像差量，并且计算校正基于主像差量的偏转失真的校正值。

公开(公告)号：US20060017013A1

公开(公告)日：2006-01-26

申请号：US11172996

申请日：2005-07-05

申请人： Takumi Ota ,  Tetsuro Nakasugi

发明人： Takumi Ota ,  Tetsuro Nakasugi

IPC分类号： G21G5/00 ,  A61N5/00

CPC分类号： H01J37/3045 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3174

摘要： A charged particle beam drawing equipment includes charged particle beam source, first and second shaping aperture masks with first and second opening portions for rotation adjustment, detection section to detect charged particle beam intensity distribution in a plane parallel to the second mask, the beam being emitted from the source and passing through the opening portions, rotation angle control section to control relative rotation angle between the masks, acquisition section to acquire relative rotation angle between the masks such that deviation in relative rotation angle between the masks falls within a predetermined range based on detection results obtained by changing the relative rotation angle between the masks plural times by the control section and by detecting the beam by the detection section for each rotation angle, and instruction section to instruct the rotation angle control section such that the relative rotation angle between the masks be the acquired rotation angle.

摘要翻译： 带电粒子束拉制设备包括带电粒子束源，具有用于旋转调节的第一和第二开口部分的第一和第二成形孔径掩模，用于检测平行于第二掩模的平面中的带电粒子束强度分布的检测部分， 从源极通过开口部分，旋转角度控制部分，以控制掩模之间的相对旋转角度，获取部分，以获得掩模之间的相对旋转角度，使得掩模之间的相对旋转角度的偏差落在预定范围内，基于 通过控制部分多次改变掩模之间的相对旋转角度并且通过每个旋转角度由检测部分检测光束而获得的检测结果，以及指令部分，其指示旋转角度控制部分，使得旋转角度控制部分之间的相对旋转角度 掩模是获得的旋转角度 。