Invention Grant
- Patent Title: Apparatus and method for plasma treatment
- Patent Title (中): 等离子体处理装置及方法
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Application No.: US09782519Application Date: 2001-02-14
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Publication No.: US06514347B2Publication Date: 2003-02-04
- Inventor: Kazuki Denpoh
- Applicant: Kazuki Denpoh
- Priority: JP2000-035735 20000214
- Main IPC: C23F102
- IPC: C23F102

Abstract:
A compensation ring 31 disposed to surround a periphery of a wafer W on a susceptor 30 is concentrically divided into an inside first compensation ring member 32 and an outside second compensation ring member 33. A width of a first compensation ring member 32 is made such thin as one to three times mean free path of treatment gas molecules, thereby suppressing heat transfer between a susceptor 30 and a second compensation ring member 33. A base of a second compensation ring member, through a layer of conductive silicone rubber 34, is made to come into an intimate contact with an upper surface of a susceptor 30, thus helping to cool.
Public/Granted literature
- US20010015262A1 Apparatus and method for plasma treatment Public/Granted day:2001-08-23
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