Invention Grant
US06514347B2 Apparatus and method for plasma treatment 有权
等离子体处理装置及方法

  • Patent Title: Apparatus and method for plasma treatment
  • Patent Title (中): 等离子体处理装置及方法
  • Application No.: US09782519
    Application Date: 2001-02-14
  • Publication No.: US06514347B2
    Publication Date: 2003-02-04
  • Inventor: Kazuki Denpoh
  • Applicant: Kazuki Denpoh
  • Priority: JP2000-035735 20000214
  • Main IPC: C23F102
  • IPC: C23F102
Apparatus and method for plasma treatment
Abstract:
A compensation ring 31 disposed to surround a periphery of a wafer W on a susceptor 30 is concentrically divided into an inside first compensation ring member 32 and an outside second compensation ring member 33. A width of a first compensation ring member 32 is made such thin as one to three times mean free path of treatment gas molecules, thereby suppressing heat transfer between a susceptor 30 and a second compensation ring member 33. A base of a second compensation ring member, through a layer of conductive silicone rubber 34, is made to come into an intimate contact with an upper surface of a susceptor 30, thus helping to cool.
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