公开(公告)号：US20090120582A1

公开(公告)日：2009-05-14

申请号：US12266800

申请日：2008-11-07

Applicant: Chishio Koshimizu ,  Kazuki Denpoh ,  Hiromasa Mochiki

Inventor： Chishio Koshimizu ,  Kazuki Denpoh ,  Hiromasa Mochiki

IPC: H01L21/3065

CPC classification number: H01J37/3244 ,  H01J37/32449

Abstract: A shower plate of a processing gas supply unit disposed in a processing chamber of a substrate processing apparatus to supply a processing gas into a processing space in the processing chamber. The shower plate is interposed between a processing gas introduction space formed in the processing gas supply unit for introduction of the processing gas and the processing space. The shower plate includes processing gas supply passageways which allow the processing gas introduction space to communicate with the processing space. The processing gas supply passageways include gas holes formed toward the processing gas introduction space and gas grooves formed toward the processing space, the gas holes and gas grooves communicating with each other. A total flow path cross sectional area of all the gas grooves is larger than a total flow path cross sectional area of all the gas holes.

Abstract translation: 处理气体供给单元的喷淋板，设置在基板处理装置的处理室中，以将处理气体供给到处理室中的处理空间。 喷淋板介于形成在处理气体供给单元中的处理气体导入空间，用于引入处理气体和处理空间。 淋浴板包括处理气体供给通道，其允许处理气体引入空间与处理空间通信。 处理气体供给通路包括朝向处理气体导入空间形成的气孔和朝向处理空间形成的气体槽，气体孔和气体槽相互连通。 所有气体槽的总流路横截面面积大于所有气孔的总流路横截面面积。

公开(公告)号：US08409459B2

公开(公告)日：2013-04-02

申请号：US12039236

申请日：2008-02-28

Applicant: Kazuki Denpoh ,  Peter L G Ventzek ,  Lin Xu ,  Lee Chen

Inventor： Kazuki Denpoh ,  Peter L G Ventzek ,  Lin Xu ,  Lee Chen

IPC: H01L21/306

CPC classification number: H01L21/02 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/50 ,  C23C16/505 ,  C23C16/509 ,  C23C16/5096 ,  H01J31/00 ,  H01J37/3244 ,  H01J37/32596

Abstract: A chamber component configured to be coupled to a processing chamber is described. The chamber component comprises one or more adjustable gas passages through which a process gas is introduced to the process chamber. The adjustable gas passage may be configured to form a hollow cathode that creates a hollow cathode plasma in a hollow cathode region having one or more plasma surfaces in contact with the hollow cathode plasma. Therein, at least one of the one or more plasma surfaces is movable in order to vary the size of the hollow cathode region and adjust the properties of the hollow cathode plasma. Furthermore, one or more adjustable hollow cathodes may be utilized to adjust a plasma process for treating a substrate.

Abstract translation: 描述了被配置为联接到处理室的室部件。 腔室部件包括一个或多个可调节的气体通道，工艺气体通过该气体通道被引入到处理室。 可调节气体通道可以被配置成形成空心阴极，该中空阴极在中空阴极区域中形成中空阴极等离子体，其具有与空心阴极等离子体接触的一个或多个等离子体表面。 其中，一个或多个等离子体表面中的至少一个可移动以便改变中空阴极区域的尺寸并调节中空阴极等离子体的性质。 此外，可以使用一个或多个可调整的中空阴极来调节用于处理衬底的等离子体工艺。

公开(公告)号：US20110094996A1

公开(公告)日：2011-04-28

申请号：US12913162

申请日：2010-10-27

Applicant: Yohei YAMAZAWA ,  Chishio KOSHIMIZU ,  Masashi SAITO ,  Kazuki DENPOH ,  Jun YAMAWAKU

Inventor： Yohei YAMAZAWA ,  Chishio KOSHIMIZU ,  Masashi SAITO ,  Kazuki DENPOH ,  Jun YAMAWAKU

IPC: C23F1/08 ,  C23C16/52 ,  C23C16/455 ,  C23C16/458 ,  C23C16/505 ,  C23F1/00

CPC classification number: H01J37/3211 ,  H01J37/321 ,  H01J37/32146 ,  H01L21/67109 ,  H01L21/6831

Abstract: A plasma processing apparatus includes a processing chamber including a dielectric window; a coil-shaped RF antenna, provided outside the dielectric window; a substrate supporting unit provided in the processing chamber; a processing gas supply unit; an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the processing chamber, the RF power having an appropriate frequency for RF discharge of the processing gas; a correction coil, provided at a position outside the processing chamber where the correction coil is to be coupled with the RF antenna by an electromagnetic induction, for controlling a plasma density distribution on the substrate in the processing chamber; a switching device provided in a loop of the correction coil; and a switching control unit for on-off controlling the switching device at a desired duty ratio by pulse width modulation.

Abstract translation: 一种等离子体处理装置，包括：具有电介质窗的处理室; 设置在电介质窗外部的线圈状RF天线; 设置在所述处理室中的基板支撑单元; 处理气体供应单元; RF电源单元，用于向RF天线提供RF功率以通过处理室中的感应耦合产生处理气体的等离子体，所述RF功率具有用于处理气体的RF放电的适当频率; 校正线圈，设置在所述处理室外侧的位置处，所述校正线圈将通过电磁感应与所述RF天线耦合，用于控制所述处理室中的所述衬底上的等离子体密度分布; 设置在所述校正线圈的环路中的开关装置; 以及用于通过脉冲宽度调制以期望的占空比开关控制开关装置的开关控制单元。

公开(公告)号：US20090218212A1

公开(公告)日：2009-09-03

申请号：US12039236

申请日：2008-02-28

Applicant: Kazuki Denpoh ,  Peter LG Ventzek ,  Lin Xu ,  Lee Chen

Inventor： Kazuki Denpoh ,  Peter LG Ventzek ,  Lin Xu ,  Lee Chen

IPC: H01L21/306

CPC classification number: H01L21/02 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/50 ,  C23C16/505 ,  C23C16/509 ,  C23C16/5096 ,  H01J31/00 ,  H01J37/3244 ,  H01J37/32596

Abstract: A chamber component configured to be coupled to a processing chamber is described. The chamber component comprises one or more adjustable gas passages through which a process gas is introduced to the process chamber. The adjustable gas passage may be configured to form a hollow cathode that creates a hollow cathode plasma in a hollow cathode region having one or more plasma surfaces in contact with the hollow cathode plasma. Therein, at least one of the one or more plasma surfaces is movable in order to vary the size of the hollow cathode region and adjust the properties of the hollow cathode plasma. Furthermore, one or more adjustable hollow cathodes may be utilized to adjust a plasma process for treating a substrate.

Abstract translation: 描述了被配置为联接到处理室的室部件。 腔室部件包括一个或多个可调节的气体通道，工艺气体通过该气体通道被引入到处理室。 可调节气体通道可以被配置成形成空心阴极，该中空阴极在中空阴极区域中形成中空阴极等离子体，其具有与空心阴极等离子体接触的一个或多个等离子体表面。 其中，一个或多个等离子体表面中的至少一个可移动以便改变中空阴极区域的尺寸并调节中空阴极等离子体的性质。 此外，可以使用一个或多个可调整的中空阴极来调节用于处理衬底的等离子体工艺。

公开(公告)号：US20090057578A1

公开(公告)日：2009-03-05

申请号：US12198420

申请日：2008-08-26

Applicant: Kazuki DENPOH

Inventor： Kazuki DENPOH

IPC: G21G4/00

CPC classification number: H05H1/46 ,  H01J37/32871 ,  H01J37/32935

Abstract: A method of plasma particle simulation capable of preventing solution divergence. A space within a housing chamber of a plasma processing apparatus is divided into a plurality of cells. A weighting factor corresponding to the number of plasma particles represented by a superparticle is set in each of the divided cells. Superparticles are set in each of the divided cells using plasma particles contained in the divided cell and the set weighting factor. The behavior of the superparticles in each of the divided cells is calculated. The weighting factor becomes smaller as the divided cell is located closer to a solid wall surface of the housing chamber.

Abstract translation: 一种能够防止溶液发散的等离子体粒子模拟方法。 等离子体处理装置的容纳室内的空间被分成多个单元。 对应于由超粒子表示的等离子体粒子的数量的加权系数设置在每个分割的单元中。 使用包含在分割单元格中的等离子体粒子和设定的加权因子，将每个分割细胞中的超粒子设定。 计算每个分割细胞中超颗粒的行为。 随着分隔的细胞位于更靠近壳体室的实心壁表面，加权因子变小。

公开(公告)号：US06514347B2

公开(公告)日：2003-02-04

申请号：US09782519

申请日：2001-02-14

Applicant: Kazuki Denpoh

Inventor： Kazuki Denpoh

IPC: C23F102

CPC classification number: H01L21/67069 ,  C23C16/4585 ,  C23C16/5096 ,  H01J37/32642

Abstract: A compensation ring 31 disposed to surround a periphery of a wafer W on a susceptor 30 is concentrically divided into an inside first compensation ring member 32 and an outside second compensation ring member 33. A width of a first compensation ring member 32 is made such thin as one to three times mean free path of treatment gas molecules, thereby suppressing heat transfer between a susceptor 30 and a second compensation ring member 33. A base of a second compensation ring member, through a layer of conductive silicone rubber 34, is made to come into an intimate contact with an upper surface of a susceptor 30, thus helping to cool.

Abstract translation: 设置在围绕基座30上的晶片W周围的补偿环31同心地分成内侧第一补偿环构件32和外侧第二补偿环构件33.第一补偿环构件32的宽度被制成如此薄 作为处理气体分子的平均自由程的一到三次，从而抑制基座30和第二补偿环构件33之间的热传递。通过导电硅橡胶层34的第二补偿环构件的基底被制成 与基座30的上表面紧密接触，从而有助于冷却。

公开(公告)号：US08829387B2

公开(公告)日：2014-09-09

申请号：US13206607

申请日：2011-08-10

Applicant: Chishio Koshimizu ,  Kazuki Denpoh

Inventor： Chishio Koshimizu ,  Kazuki Denpoh

IPC: B23K10/00 ,  H01J37/32

CPC classification number: H01J37/32091 ,  H01J37/32596 ,  H01J37/32697

Abstract: There is provided a plasma processing apparatus capable of performing a uniform plasma process on a substrate by controlling a plasma distribution within a chamber to a desired state and uniformizing a plasma density within the chamber. The plasma processing apparatus includes an evacuable chamber 11 for performing a plasma process on a wafer W; a susceptor 12 for mounting the wafer W within the chamber 11; an upper electrode plate 30a facing the susceptor 12 with a processing space S; a high frequency power supply 20 for applying a high frequency power to one of the susceptor 12 and the upper electrode plate 30a to generate plasma within the processing space S; and an inner wall member facing the processing space S. Hollow cathodes 31a to 31c are formed at the upper electrode plate 30a connected with a DC power supply 37 for adjusting a sheath voltage.

Abstract translation: 提供了一种等离子体处理装置，其能够通过将室内的等离子体分布控制到期望的状态并使室内的等离子体密度均匀化来在基板上执行均匀的等离子体处理。 等离子体处理装置包括用于对晶片W进行等离子体处理的可抽空室11; 用于将晶片W安装在腔室11内的基座12; 面对具有处理空间S的基座12的上电极板30a; 用于向基座12和上电极板30a之一施加高频电力以在处理空间S内产生等离子体的高频电源20; 以及面向处理空间S的内壁构件。空气阴极31a至31c形成在与用于调节护套电压的直流电源37连接的上电极板30a处。

公开(公告)号：US08124539B2

公开(公告)日：2012-02-28

申请号：US12850391

申请日：2010-08-04

Applicant: Shosuke Endoh ,  Noriyuki Iwabuchi ,  Shigeaki Kato ,  Tomoya Okubo ,  Jun Hirose ,  Koichi Nagakura ,  Chishio Koshimizu ,  Kazuki Denpoh

Inventor： Shosuke Endoh ,  Noriyuki Iwabuchi ,  Shigeaki Kato ,  Tomoya Okubo ,  Jun Hirose ,  Koichi Nagakura ,  Chishio Koshimizu ,  Kazuki Denpoh

IPC: H01L21/302

CPC classification number: H01L21/67069 ,  H01J37/32082 ,  H01J37/32642 ,  H01L21/6831

Abstract: A plasma processing apparatus having a focus ring, enables the efficiency of cooling of the focus ring to be greatly improved, while preventing an increase in cost thereof. The plasma processing apparatus is comprised of a susceptor which has an electrostatic chuck and the focus ring. A wafer W to be subjected to plasma processing is mounted on the electrostatic chuck. The focus ring has a dielectric material portion and a conductive material portion. The dielectric material portion forms a contact portion disposed in contact with the electrostatic chuck. The conductive material portion faces the electrostatic chuck with the dielectric material portion therebetween.

Abstract translation: 具有聚焦环的等离子体处理装置能够大大提高聚焦环的冷却效率，同时防止其成本增加。 等离子体处理装置由具有静电卡盘和聚焦环的基座构成。 将要进行等离子体处理的晶片W安装在静电卡盘上。 聚焦环具有电介质材料部分和导电材料部分。 介电材料部分形成与静电卡盘接触设置的接触部分。 导电材料部分面对电介质材料部分的静电卡盘。

公开(公告)号：US20120037597A1

公开(公告)日：2012-02-16

申请号：US13206607

申请日：2011-08-10

Applicant: Chishio Koshimizu ,  Kazuki Denpoh

Inventor： Chishio Koshimizu ,  Kazuki Denpoh

IPC: C23F1/00 ,  C23C16/50 ,  C23C16/458 ,  C23F1/08 ,  H05H1/24

CPC classification number: H01J37/32091 ,  H01J37/32596 ,  H01J37/32697

Abstract: There is provided a plasma processing apparatus capable of performing a uniform plasma process on a substrate by controlling a plasma distribution within a chamber to a desired state and uniformizing a plasma density within the chamber. The plasma processing apparatus includes an evacuable chamber 11 for performing a plasma process on a wafer W; a susceptor 12 for mounting the wafer W within the chamber 11; an upper electrode plate 30a facing the susceptor 12 with a processing space S; a high frequency power supply 20 for applying a high frequency power to one of the susceptor 12 and the upper electrode plate 30a to generate plasma within the processing space S; and an inner wall member facing the processing space S. Hollow cathodes 31a to 31c are formed at the upper electrode plate 30a connected with a DC power supply 37 for adjusting a sheath voltage.

Abstract translation: 提供了一种等离子体处理装置，其能够通过将室内的等离子体分布控制到期望的状态并使室内的等离子体密度均匀化来在基板上执行均匀的等离子体处理。 等离子体处理装置包括用于对晶片W进行等离子体处理的可抽空室11; 用于将晶片W安装在腔室11内的基座12; 面对具有处理空间S的基座12的上电极板30a; 用于向基座12和上电极板30a之一施加高频电力以在处理空间S内产生等离子体的高频电源20; 以及面向处理空间S的内壁构件。空气阴极31a至31c形成在与用于调节护套电压的直流电源37连接的上电极板30a处。

公开(公告)号：US20110094997A1

公开(公告)日：2011-04-28

申请号：US12913183

申请日：2010-10-27

Applicant: Yohei Yamazawa ,  Masashi Saito ,  Kazuki Denpoh ,  Chishio Koshimizu ,  Jun Yamawaku

Inventor： Yohei Yamazawa ,  Masashi Saito ,  Kazuki Denpoh ,  Chishio Koshimizu ,  Jun Yamawaku

IPC: C23F1/08 ,  C23C16/505 ,  H05H1/24 ,  C23F1/00

CPC classification number: H01J37/3211 ,  H01J37/321 ,  H01J37/32174 ,  H01J37/3244 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/6831 ,  H05H1/46

Abstract: A plasma processing apparatus includes: an evacuable processing chamber including a dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting thereon a target substrate; a processing gas supply unit for supplying a desired processing gas to the processing chamber to perform a plasma process on the target substrate; a first RF antenna, provided on the dielectric window, for generating a plasma by an inductive coupling in the processing chamber; and a first RF power supply unit for supplying an RF power to the first RF antenna. The first RF antenna includes a primary coil provided on or above the dielectric window and electrically connected to the first RF power supply unit;and a secondary coil provided such that the coils are coupled with each other by an electromagnetic induction therebetween while being arranged closer to a bottom surface of the dielectric window than the primary coil.

Abstract translation: 一种等离子体处理装置，包括：具有电介质窗的可抽空处理室; 基板支撑单元，设置在处理室中，用于在其上安装目标基板; 处理气体供给单元，用于向所述处理室供给期望的处理气体，以在所述目标基板上进行等离子体处理; 设置在电介质窗口上的第一RF天线，用于通过处理室中的感应耦合产生等离子体; 以及用于向第一RF天线提供RF功率的第一RF电源单元。 第一RF天线包括设置在电介质窗口上或电介质窗上方的电连接到第一RF电源单元的初级线圈; 以及次级线圈，其被设置成使得线圈通过其间的电磁感应彼此耦合，同时布置成比初级线圈更靠近电介质窗口的底表面。