Invention Grant
- Patent Title: Method to eliminate coil sputtering in an ICP source
- Patent Title (中): 在ICP源中消除线圈溅射的方法
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Application No.: US08733620Application Date: 1996-10-17
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Publication No.: US06514390B1Publication Date: 2003-02-04
- Inventor: Zheng Xu , Fusen Chen , Jaim Nulman
- Applicant: Zheng Xu , Fusen Chen , Jaim Nulman
- Main IPC: C23C1435
- IPC: C23C1435
Abstract:
A magnetic shield to reduce sputtering of an RF coil for a plasma chamber in a semiconductor fabrication system is provided. The magnetic shield also reduces deposition of material onto the coil which in turn leads to a reduction in particulate matter shed by the coil onto the workpiece.
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