公开(公告)号：US06217721B1

公开(公告)日：2001-04-17

申请号：US08628835

申请日：1996-04-05

申请人： Zheng Xu ,  John Forster ,  Tse-Yong Yao ,  Jaim Nulman ,  Fusen Chen

发明人： Zheng Xu ,  John Forster ,  Tse-Yong Yao ,  Jaim Nulman ,  Fusen Chen

IPC分类号： C23C1434

CPC分类号： H01L21/2855 ,  C23C14/0036 ,  C23C14/046 ,  C23C14/0641 ,  C23C14/32 ,  C23C14/358 ,  H01J37/34 ,  H01J2237/32 ,  H01L21/28518 ,  H01L21/76846 ,  H01L21/76876 ,  H01L21/76877 ,  H01L21/76882 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/53223 ,  H01L23/53233 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： An aluminum sputtering process, particularly useful for filling vias and contacts of high aspect ratios formed through a dielectric layer and also usefull for forming interconnects that are highly resistant to electromigration. A liner or barrier layer is first deposited by a high-density plasma (HDP) physical vapor deposition (PVD, also called sputtering) process, such as is done with an inductively coupled plasma. If a contact is connected at its bottom to a silicon element, the first sublayer of the liner layer is a Ti layer, which is silicided to the silicon substrate. The second sublayer comprises TiN, which not only acts as a barrier against the migration of undesirable components into the underlying silicon but also when deposited with an HDP process and biased wafer forms a dense, smooth crystal structure. The third sublayer comprises Ti and preferably is graded from TiN to Ti. Over the liner layer, an aluminum layer is deposited in a standard, non-HDP process. The liner layer allows the hottest part of the aluminum deposition to be performed at a relatively low temperature between 320 and 500° C., preferably between 350 and 420° C., while still filling narrow plug holes, and the TiN does not need to be annealed to form an effective barrier against diffusion into the silicon. A horizontal interconnect formed by the inventive process is resistant to electromigration.

摘要翻译： 铝溅射工艺，特别适用于填充通过电介质层形成的高纵横比的通孔和触点，并且也可用于形成高度抵抗电迁移的互连。 衬垫或阻挡层首先通过高密度等离子体（HDP）物理气相沉积（PVD，也称为溅射）工艺沉积，例如用电感耦合等离子体进行。 如果接触件的底部连接到硅元件，衬垫层的第一子层是Ti层，硅层被硅化到硅衬底。 第二子层包括TiN，其不仅用作防止不期望的组分迁移到下面的硅中的阻挡层，而且当用HDP工艺沉积并且偏置的晶片形成致密的，平滑的晶体结构时。 第三子层包含Ti，优选从TiN到Ti分级。 在衬里层上，铝层以标准的非HDP工艺沉积。 衬垫层允许铝沉积的最热部分在320和500℃之间的较低温度下进行，优选在350和420℃之间，同时仍然填充窄的塞孔，并且TiN不需要 进行退火以形成抵抗硅中扩散的有效屏障。 由本发明方法形成的水平互连对于电迁移是耐受的。

公开(公告)号：US06514390B1

公开(公告)日：2003-02-04

申请号：US08733620

申请日：1996-10-17

申请人： Zheng Xu ,  Fusen Chen ,  Jaim Nulman

发明人： Zheng Xu ,  Fusen Chen ,  Jaim Nulman

IPC分类号： C23C1435

CPC分类号： H01J37/321 ,  H01J37/3405

摘要： A magnetic shield to reduce sputtering of an RF coil for a plasma chamber in a semiconductor fabrication system is provided. The magnetic shield also reduces deposition of material onto the coil which in turn leads to a reduction in particulate matter shed by the coil onto the workpiece.

摘要翻译： 提供了用于减少半导体制造系统中的等离子体室的RF线圈的溅射的磁屏蔽。 磁屏蔽还减少了材料在线圈上的沉积，这又导致线圈在工件上散落的颗粒物质的减少。

公开(公告)号：US08398832B2

公开(公告)日：2013-03-19

申请号：US11229139

申请日：2005-09-15

申请人： Jaim Nulman ,  Sergio Edelstein ,  Mani Subramani ,  Zheng Xu ,  Howard E. Grunes ,  Avi Tepman ,  John C. Forster ,  Praburam Gopalraja

发明人： Jaim Nulman ,  Sergio Edelstein ,  Mani Subramani ,  Zheng Xu ,  Howard E. Grunes ,  Avi Tepman ,  John C. Forster ,  Praburam Gopalraja

IPC分类号： C23C14/34

CPC分类号： C23C14/34 ,  H01J37/321 ,  H01J37/34

摘要： A sputtering coil for a plasma chamber in a semiconductor fabrication system is provided. The sputtering coil couples energy into a plasma and also provides a source of sputtering material to be sputtered onto a workpiece from the coil to supplement material being sputtered from a target onto the workpiece. Alternatively a plurality of coils may be provided, one primarily for coupling energy into the plasma and the other primarily for providing a supplemental source of sputtering material to be sputtered on the workpiece.

公开(公告)号：US20060070875A1

公开(公告)日：2006-04-06

申请号：US11229139

申请日：2005-09-15

申请人： Jaim Nulman ,  Sergio Edelstein ,  Mani Subramani ,  Zheng Xu ,  Howard Grunes ,  Avi Tepman ,  John Forster ,  Praburam Gopalraja

发明人： Jaim Nulman ,  Sergio Edelstein ,  Mani Subramani ,  Zheng Xu ,  Howard Grunes ,  Avi Tepman ,  John Forster ,  Praburam Gopalraja

IPC分类号： C23C14/00 ,  C25B11/00

CPC分类号： C23C14/34 ,  H01J37/321 ,  H01J37/34

摘要： A sputtering coil for a plasma chamber in a semiconductor fabrication system is provided. The sputtering coil couples energy into a plasma and also provides a source of sputtering material to be sputtered onto a workpiece from the coil to supplement material being sputtered from a target onto the workpiece. Alternatively a plurality of coils may be provided, one primarily for coupling energy into the plasma and the other primarily for providing a supplemental source of sputtering material to be sputtered on the workpiece.

公开(公告)号：US06783639B2

公开(公告)日：2004-08-31

申请号：US10052951

申请日：2002-01-17

申请人： Jaim Nulman ,  Sergio Edelstein ,  Mani Subramani ,  Zheng Xu ,  Howard Grunes ,  Avi Tepman ,  John Forster ,  Praburam Gopalraja

发明人： Jaim Nulman ,  Sergio Edelstein ,  Mani Subramani ,  Zheng Xu ,  Howard Grunes ,  Avi Tepman ,  John Forster ,  Praburam Gopalraja

IPC分类号： C23C1434

CPC分类号： H01J37/3438 ,  H01J37/3402

摘要： A sputtering coil for a plasma chamber in a semiconductor fabrication system is provided. The sputtering coil couples energy into a plasma and also provides a source of sputtering material to be sputtered onto a workpiece from the coil to supplement material being sputtered from a target onto the workpiece. Alternatively a plurality of coils may be provided, one primarily for coupling energy into the plasma and the other primarily for providing a supplemental source of sputtering material to be sputtered on the workpiece.

公开(公告)号：US06368469B1

公开(公告)日：2002-04-09

申请号：US08851946

申请日：1997-05-06

申请人： Jaim Nulman ,  Sergio Edelstein ,  Mani Subramani ,  Zheng Xu ,  Howard Grunes ,  Avi Tepman ,  John Forster ,  Praburam Gopalraja

发明人： Jaim Nulman ,  Sergio Edelstein ,  Mani Subramani ,  Zheng Xu ,  Howard Grunes ,  Avi Tepman ,  John Forster ,  Praburam Gopalraja

IPC分类号： C23C1434

CPC分类号： H01J37/3438 ,  H01J37/3402

摘要： A sputtering coil for a plasma chamber in a semiconductor fabrication system is provided. The sputtering coil couples energy into a plasma and also provides a source of sputtering material to be sputtered onto a workpiece from the coil to supplement material being sputtered from a target onto the workpiece. Alternatively a plurality of coils may be provided, one primarily for coupling energy into the plasma and the other primarily for providing a supplemental source of sputtering material to be sputtered on the workpiece.

公开(公告)号：US06231725B1

公开(公告)日：2001-05-15

申请号：US09129109

申请日：1998-08-04

申请人： Jaim Nulman ,  Zheng Xu

发明人： Jaim Nulman ,  Zheng Xu

IPC分类号： C23C1434

CPC分类号： C23C14/352 ,  C23C14/358 ,  C23C14/564

摘要： An apparatus for sputtering material onto a workpiece, composed of: a chamber; a first target disposed in the chamber for sputtering material onto the workpiece; a holder for holding the workpiece in the chamber; a plasma generation area between the target and the holder; a coil for inductively coupling energy into the plasma generation area for generating and sustaining a plasma in the plasma generation area; and a second target disposed in the chamber below the first target and above the coil for sputtering material onto the workpiece.

摘要翻译： 一种用于将材料溅射到工件上的装置，包括：腔室; 设置在所述室中的用于将材料溅射到所述工件上的第一靶; 用于将工件保持在室中的保持器; 靶和保持器之间的等离子体产生区域; 用于将能量感应耦合到等离子体产生区域中以在等离子体产生区域中产生和维持等离子体的线圈; 以及设置在所述第一靶的下方的所述腔内并且在所述线圈上方的用于将材料溅射到所述工件上的第二靶。

公开(公告)号：US20060029489A1

公开(公告)日：2006-02-09

申请号：US11248375

申请日：2005-10-11

申请人： Jaim Nulman ,  Nissim Sidi

发明人： Jaim Nulman ,  Nissim Sidi

IPC分类号： B65H1/00

CPC分类号： H01L21/67769 ,  H01L21/67028 ,  H01L21/67271 ,  H01L21/68707 ,  Y10S414/139 ,  Y10S414/14

摘要： A cassette stocker includes a plurality of cassette storage shelves positioned adjacent a cleanroom wall and vertically disposed relative to a plurality of cassette docking stations, and a cassette mover to carry a cassette between the shelves and the docking stations. An interstation transfer apparatus includes a support beam and a transfer arm adapted to carry a cassette between processing stations.

公开(公告)号：US06572321B1

公开(公告)日：2003-06-03

申请号：US09684142

申请日：2000-10-05

申请人： Jaim Nulman

发明人： Jaim Nulman

IPC分类号： B65G1133

CPC分类号： H01L21/67772 ,  H01L21/67715 ,  H01L21/67736 ,  Y10S414/14

摘要： A loader conveyor adapted so as to receive a wafer carrier from a transfer conveyor and adapted to terminate at an intersection with a processing system, is provided. Thus, the need for a front-end loader robot may be eliminated.

摘要翻译： 提供一种装载机输送机，其适于从传送输送机接收晶片载体并且适于终止于与处理系统的交点处。 因此，可以消除对前端装载机器人的需要。

公开(公告)号：US06171455B2

公开(公告)日：2001-01-09

申请号：US09419712

申请日：1999-10-14

申请人： Vikram Pavate ,  Keith J. Hansen ,  Glen Mori ,  Murali Narasimhan ,  Seshadri Ramaswami ,  Jaim Nulman

发明人： Vikram Pavate ,  Keith J. Hansen ,  Glen Mori ,  Murali Narasimhan ,  Seshadri Ramaswami ,  Jaim Nulman

IPC分类号： C23C1434

CPC分类号： C23C14/3414 ,  Y10S29/002 ,  Y10S29/005 ,  Y10T29/49988

摘要： Improved targets for use in DC_magnetron sputtering of aluminum or like metals are disclosed for forming metallization films having low defect densities. Methods for manufacturing and using such targets are also disclosed. Conductivity anomalies such as those composed of metal oxide inclusions can induce arcing between the target surface and the plasma. The arcing can lead to production of excessive deposition material in the form of splats or blobs. Reducing the content of conductivity anomalies and strengthening the to-be-deposited material is seen to reduce production of such splats or blobs. Other splat limiting steps include smooth finishing of the target surface and low-stress ramp up of the plasma.

摘要翻译： 公开了用于形成具有低缺陷密度的金属化膜的改进的用于铝或类似金属的DC_磁控溅射的靶。 还公开了制造和使用这些靶的方法。 诸如由金属氧化物夹杂物组成的电导率异常可以引起目标表面和等离子体之间的电弧。 电弧会导致过剩的沉积材料以斑块或斑点的形式产生。 减少电导率异常的含量和加强待沉积材料可以减少这种斑块或斑点的产生。 其它限制步骤包括平滑地对目标表面进行精加工和等离子体的低应力升高。