发明授权
- 专利标题: Phase shift mask and method of manufacture
- 专利标题(中): 相移掩模和制造方法
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申请号: US09790886申请日: 2001-02-23
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公开(公告)号: US06514642B2公开(公告)日: 2003-02-04
- 发明人: Satoshi Okazaki , Tamotsu Maruyama , Yukio Inazuki , Hideo Kaneko , Shinichi Kohno
- 申请人: Satoshi Okazaki , Tamotsu Maruyama , Yukio Inazuki , Hideo Kaneko , Shinichi Kohno
- 优先权: JP2000-047373 20000224
- 主分类号: G03F900
- IPC分类号: G03F900
摘要:
In a phase shift mask comprising an exposure light-transmitting substrate and a second light-transmitting region thereon, the second light-transmitting region functions as a phase shifter and is made of a fluorine-doped molybdenum silicide film or fluorine-doped chromium silicide film formed by a sputtering technique that uses molybdenum metal, chromium metal, molybdenum silicide or chromium silicide as the target and SiF2 as the reactive gas. The phase shifter has a high refractive index to short-wavelength exposure light, enabling a 180-degree phase change to be achieved at a minimum film thickness, and also has a good stability to such light. The phase shift mask can be used to fabricate semiconductor integrated circuits to a smaller minimum feature size and a higher level of integration.
公开/授权文献
- US20010028982A1 Phase shift mask and method of manufacture 公开/授权日:2001-10-11