发明授权
- 专利标题： Method of forming smaller contact size using a spacer hard mask
- 专利标题（中）： 使用间隔物硬掩模形成较小接触尺寸的方法
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申请号： US09824420申请日： 2001-04-02
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公开(公告)号： US06514849B1公开(公告)日： 2003-02-04
- 发明人: Angela T. Hui , Bhanwar Singh
- 申请人： Angela T. Hui , Bhanwar Singh
- 主分类号： H01L214763
- IPC分类号： H01L214763
摘要：
An exemplary method of forming contact holes includes providing a photoresist pattern over an anti-reflective coating (ARC) layer where the ARC layer is deposited over a layer of material; etching the ARC layer according to the photoresist pattern to form ARC features; forming spacers on lateral sides of the ARC features; and etching trench lines using the spacers and ARC features as hard mask to define portions of the layer of material which are etched.
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