发明授权
US06515323B1 Ferroelectric memory device having improved ferroelectric characteristics 失效
具有改善的铁电特性的铁电存储器件

  • 专利标题: Ferroelectric memory device having improved ferroelectric characteristics
  • 专利标题(中): 具有改善的铁电特性的铁电存储器件
  • 申请号: US09698262
    申请日: 2000-10-30
  • 公开(公告)号: US06515323B1
    公开(公告)日: 2003-02-04
  • 发明人: Dong-Jin JungKi-Nam Kim
  • 申请人: Dong-Jin JungKi-Nam Kim
  • 优先权: KR98-23272 19980620
  • 主分类号: H01L2976
  • IPC分类号: H01L2976
Ferroelectric memory device having improved ferroelectric characteristics
摘要:
A ferroelectric capacitor with a ferroelectric film having a relatively larger amount of titanium constituent than zirconate constituent improves ferroelectric characteristics. The method for fabricating the ferroelectric capacitor includes the step of performing a heat treatment in an oxygen atmosphere after forming a contact opening in an insulating layer which covers an already formed ferroelectric capacitor. This heat treatment in an oxygen atmosphere can minimize undesirable side effects resulting from a platinum electrode oxidizing the ferroelectric film components.
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