发明授权
- 专利标题: Ferroelectric memory device having improved ferroelectric characteristics
- 专利标题(中): 具有改善的铁电特性的铁电存储器件
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申请号: US09698262申请日: 2000-10-30
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公开(公告)号: US06515323B1公开(公告)日: 2003-02-04
- 发明人: Dong-Jin Jung , Ki-Nam Kim
- 申请人: Dong-Jin Jung , Ki-Nam Kim
- 优先权: KR98-23272 19980620
- 主分类号: H01L2976
- IPC分类号: H01L2976
摘要:
A ferroelectric capacitor with a ferroelectric film having a relatively larger amount of titanium constituent than zirconate constituent improves ferroelectric characteristics. The method for fabricating the ferroelectric capacitor includes the step of performing a heat treatment in an oxygen atmosphere after forming a contact opening in an insulating layer which covers an already formed ferroelectric capacitor. This heat treatment in an oxygen atmosphere can minimize undesirable side effects resulting from a platinum electrode oxidizing the ferroelectric film components.
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