公开(公告)号：US06929997B2

公开(公告)日：2005-08-16

申请号：US10113622

申请日：2002-04-02

申请人： Dong-Jin Jung ,  Ki-Nam Kim

发明人： Dong-Jin Jung ,  Ki-Nam Kim

IPC分类号： H01L27/105 ,  H01L21/02 ,  H01L21/316 ,  H01L21/8246 ,  H01L27/10 ,  H01L27/115 ,  H01L21/8242

CPC分类号： H01L27/11502 ,  H01L21/31604 ,  H01L21/3162 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/75

摘要： Disclosed is a triple metal line 1T/1C ferroelectric memory device and a method to make the same. A ferroelectric capacitor is connected to the transistor through a buried contact plug. An oxidation barrier layer lies between the contact plug and the lower electrode of the capacitor. A diffusion barrier layer covers the ferroelectric capacitor to prevent diffusion of material into or out of capacitor. As a result of forming the oxidation barrier layer, the contact plug is not exposed to the ambient oxygen atmosphere thereby providing a reliable ohmic contact between the contact plug and the lower electrode. Also, the memory device provides a triple interconnection structure made of metal, which improves device operation characteristics.

摘要翻译： 公开了三金属线1T / 1C铁电存储器件及其制造方法。 铁电电容器通过埋入式接触插头连接到晶体管。 氧化阻挡层位于电容器的接触插塞和下电极之间。 扩散阻挡层覆盖铁电电容器以防止材料扩散进入或流出电容器。 作为形成氧化阻挡层的结果，接触塞不暴露于环境氧气氛中，从而在接触塞和下电极之间提供可靠的欧姆接触。 此外，存储器件提供由金属制成的三重互连结构，这提高了器件操作特性。

公开(公告)号：US20050117382A1

公开(公告)日：2005-06-02

申请号：US11029232

申请日：2005-01-04

申请人： Hyun-Ho Kim ,  Dong-Jin Jung ,  Ki-Nam Kim ,  Sang-Don Nam ,  Kyu-Mann Lee

发明人： Hyun-Ho Kim ,  Dong-Jin Jung ,  Ki-Nam Kim ,  Sang-Don Nam ,  Kyu-Mann Lee

IPC分类号： H01L27/105 ,  G11C11/22 ,  H01L21/8246 ,  H01L27/115

CPC分类号： H01L27/11502 ,  G11C11/22 ,  H01L27/11507

摘要： A ferroelectric memory device includes a microelectronic substrate and a plurality of ferroelectric capacitors on the substrate, arranged as a plurality of rows and columns in respective row and column directions. A plurality of parallel plate lines overlie the ferroelectric capacitors and extend along the row direction, wherein a plate line contacts ferroelectric capacitors in at least two adjacent rows. The plurality of plate lines may include a plurality of local plate lines, and the ferroelectric memory device may further include an insulating layer disposed on the local plate lines and a plurality of main plate lines disposed on the insulating layer and contacting the local plate lines through openings in the insulating layer. In some embodiments, ferroelectric capacitors in adjacent rows share a common upper electrode, and respective ones of the local plate lines are disposed on respective ones of the common upper electrodes. Ferroelectric capacitors in adjacent rows may share a common ferroelectric dielectric region. Related fabrication methods are discussed.

摘要翻译： 铁电存储器件包括微电子衬底和在衬底上的多个铁电电容器，其被布置为在行和列方向上的多个行和列。 多个平行板线覆盖在铁电电容器上并沿着行方向延伸，其中板线在至少两个相邻行中接触铁电电容器。 多个板线可以包括多个局部板线，并且铁电存储器件还可以包括设置在局部板线上的绝缘层和设置在绝缘层上的多个主板线，并且使本地板线通过 绝缘层中的开口。 在一些实施例中，相邻行中的铁电电容器共享公共上电极，并且各自的局部板线设置在相应的公共上电极上。 相邻行中的铁电电容器可以共享公共铁电电介质区域。 讨论相关的制造方法。

公开(公告)号：US07560760B2

公开(公告)日：2009-07-14

申请号：US11859958

申请日：2007-09-24

申请人： Hyun-Ho Kim ,  Dong-Jin Jung ,  Ki-Nam Kim ,  Sang-Don Nam ,  Kyu-Mann Lee

发明人： Hyun-Ho Kim ,  Dong-Jin Jung ,  Ki-Nam Kim ,  Sang-Don Nam ,  Kyu-Mann Lee

IPC分类号： H01L27/115

CPC分类号： H01L27/11502 ,  G11C11/22 ,  H01L27/11507

摘要： A ferroelectric memory device includes a microelectronic substrate and a plurality of ferroelectric capacitors on the substrate, arranged as a plurality of row and columns in respective row and column directions. A plurality of parallel plate lines overlie the ferroelectric capacitors and extend along the row direction, wherein a plate line contacts ferroelectric capacitors in at least two adjacent rows. The plurality of plate lines may include a plurality of local plate lines, and the ferroelectric memory device may further include an insulating layer disposed on the local plate lines and a plurality of main plate lines disposed on the insulating layer and contacting the local plate lines through openings in the insulating layer. In some embodiments, ferroelectric capacitors in adjacent rows share a common upper electrode, and respective ones of the local plate lines are disposed on respective ones of the common upper electrodes. Ferroelectric capacitors in adjacent rows may share a common ferroelectric dielectric region. Related fabrication methods are discussed.

摘要翻译： 铁电存储器件包括微电子衬底和在衬底上的多个铁电电容器，被布置为在行和列方向上的多个行和列。 多个平行板线覆盖在铁电电容器上并沿着行方向延伸，其中板线在至少两个相邻行中接触铁电电容器。 多个板线可以包括多个局部板线，并且铁电存储器件还可以包括设置在局部板线上的绝缘层和设置在绝缘层上的多个主板线，并且使本地板线通过 绝缘层中的开口。 在一些实施例中，相邻行中的铁电电容器共享公共上电极，并且各自的局部板线设置在相应的公共上电极上。 相邻行中的铁电电容器可以共享公共铁电电介质区域。 讨论相关的制造方法。

公开(公告)号：US20080025065A1

公开(公告)日：2008-01-31

申请号：US11859958

申请日：2007-09-24

申请人： Hyun-Ho Kim ,  Dong-Jin Jung ,  Ki-Nam Kim ,  Sang-Don Nam ,  Kyu-Mann Lee

发明人： Hyun-Ho Kim ,  Dong-Jin Jung ,  Ki-Nam Kim ,  Sang-Don Nam ,  Kyu-Mann Lee

IPC分类号： G11C11/22

CPC分类号： H01L27/11502 ,  G11C11/22 ,  H01L27/11507

摘要： A ferroelectric memory device includes a microelectronic substrate and a plurality of ferroelectric capacitors on the substrate, arranged as a plurality of row and columns in respective row and column directions. A plurality of parallel plate lines overlie the ferroelectric capacitors and extend along the row direction, wherein a plate line contacts ferroelectric capacitors in at least two adjacent rows. The plurality of plate lines may include a plurality of local plate lines, and the ferroelectric memory device may further include an insulating layer disposed on the local plate lines and a plurality of main plate lines disposed on the insulating layer and contacting the local plate lines through openings in the insulating layer. In some embodiments, ferroelectric capacitors in adjacent rows share a common upper electrode, and respective ones of the local plate lines are disposed on respective ones of the common upper electrodes. Ferroelectric capacitors in adjacent rows may share a common ferroelectric dielectric region. Related fabrication methods are discussed.

摘要翻译： 铁电存储器件包括微电子衬底和在衬底上的多个铁电电容器，被布置为在行和列方向上的多个行和列。 多个平行板线覆盖在铁电电容器上并沿着行方向延伸，其中板线在至少两个相邻行中接触铁电电容器。 多个板线可以包括多个局部板线，并且铁电存储器件还可以包括设置在局部板线上的绝缘层和设置在绝缘层上的多个主板线，并且使本地板线通过 绝缘层中的开口。 在一些实施例中，相邻行中的铁电电容器共享公共上电极，并且各自的局部板线设置在相应的公共上电极上。 相邻行中的铁电电容器可以共享公共铁电电介质区域。 讨论相关的制造方法。

公开(公告)号：US06515323B1

公开(公告)日：2003-02-04

申请号：US09698262

申请日：2000-10-30

申请人： Dong-Jin Jung ,  Ki-Nam Kim

发明人： Dong-Jin Jung ,  Ki-Nam Kim

IPC分类号： H01L2976

CPC分类号： H01L27/11502 ,  H01L28/55

摘要： A ferroelectric capacitor with a ferroelectric film having a relatively larger amount of titanium constituent than zirconate constituent improves ferroelectric characteristics. The method for fabricating the ferroelectric capacitor includes the step of performing a heat treatment in an oxygen atmosphere after forming a contact opening in an insulating layer which covers an already formed ferroelectric capacitor. This heat treatment in an oxygen atmosphere can minimize undesirable side effects resulting from a platinum electrode oxidizing the ferroelectric film components.

摘要翻译： 具有比锆酸盐成分更大量的钛组分的铁电体的铁电体电容器改善了铁电特性。 制造铁电电容器的方法包括在覆盖已经形成的铁电电容器的绝缘层中形成接触开口之后在氧气氛中进行热处理的步骤。 在氧气氛中的这种热处理可以使由铂电极氧化铁电体膜组分导致的不期望的副作用最小化。

公开(公告)号：US20050035384A1

公开(公告)日：2005-02-17

申请号：US10948610

申请日：2004-09-23

申请人： Hyun-Ho Kim ,  Dong-Jin Jung ,  Ki-Nam Kim ,  Sang-Don Nam ,  Kyu-Mann Lee

发明人： Hyun-Ho Kim ,  Dong-Jin Jung ,  Ki-Nam Kim ,  Sang-Don Nam ,  Kyu-Mann Lee

IPC分类号： H01L27/105 ,  G11C11/22 ,  H01L21/8246 ,  H01L27/115 ,  H01L29/76

CPC分类号： H01L27/11502 ,  G11C11/22 ,  H01L27/11507

摘要： A ferroelectric memory device includes a microelectronic substrate and a plurality of ferroelectric capacitors on the substrate, arranged as a plurality of rows and columns in respective row and column directions. A plurality of parallel plate lines overlie the ferroelectric capacitors and extend along the row direction, wherein a plate line contacts ferroelectric capacitors in at least two adjacent rows. The plurality of plate lines may include a plurality of local plate lines, and the ferroelectric memory device may further include an insulating layer disposed on the local plate lines and a plurality of main plate lines disposed on the insulating layer and contacting the local plate lines through openings in the insulating layer. In some embodiments, ferroelectric capacitors in adjacent rows share a common upper electrode, and respective ones of the local plate lines are disposed on respective ones of the common upper electrodes. Ferroelectric capacitors in adjacent rows may share a common ferroelectric dielectric region. Related fabrication methods are discussed.

公开(公告)号：US06844583B2

公开(公告)日：2005-01-18

申请号：US10136991

申请日：2002-05-02

申请人： Hyun-Ho Kim ,  Dong-Jin Jung ,  Ki-Nam Kim ,  Sang-Don Nam ,  Kyu-Mann Lee

发明人： Hyun-Ho Kim ,  Dong-Jin Jung ,  Ki-Nam Kim ,  Sang-Don Nam ,  Kyu-Mann Lee

IPC分类号： H01L27/105 ,  G11C11/22 ,  H01L21/8246 ,  H01L27/115 ,  H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L27/11502 ,  G11C11/22 ,  H01L27/11507

摘要： A ferroelectric memory device includes a microelectronic substrate and a plurality of ferroelectric capacitors on the substrate, arranged as a plurality of rows and columns in respective row and column directions. A plurality of parallel plate lines overlie the ferroelectric capacitors and extend along the row direction, wherein a plate line contacts ferroelectric capacitors in at least two adjacent rows. The plurality of plate lines may include a plurality of local plate lines, and the ferroelectric memory device may further include an insulating layer disposed on the local plate lines and a plurality of main plate lines disposed on the insulating layer and contacting the local plate lines through openings in the insulating layer. In some embodiments, ferroelectric capacitors in adjacent rows share a common upper electrode, and respective ones of the local plate lines are disposed on respective ones of the common upper electrodes. Ferroelectric capacitors in adjacent rows may share a common ferroelectric dielectric region. Related fabrication methods are discussed.

摘要翻译： 铁电存储器件包括微电子衬底和在衬底上的多个铁电电容器，其被布置为在行和列方向上的多个行和列。 多个平行板线覆盖在铁电电容器上并沿着行方向延伸，其中板线在至少两个相邻行中接触铁电电容器。 多个板线可以包括多个局部板线，并且铁电存储器件还可以包括设置在局部板线上的绝缘层和设置在绝缘层上的多个主板线，并且使本地板线通过 绝缘层中的开口。 在一些实施例中，相邻行中的铁电电容器共享公共上电极，并且各自的局部板线设置在相应的公共上电极上。 相邻行中的铁电电容器可以共享公共铁电电介质区域。 讨论相关的制造方法。

公开(公告)号：US06388281B1

公开(公告)日：2002-05-14

申请号：US09617912

申请日：2000-07-17

申请人： Dong-Jin Jung ,  Ki-Nam Kim

发明人： Dong-Jin Jung ,  Ki-Nam Kim

IPC分类号： H01L2976

CPC分类号： H01L27/11502 ,  H01L21/31604 ,  H01L21/3162 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/75

摘要： Disclosed is a triple metal line 1T/1C ferroelectric memory device and a method to make the same. A ferroelectric capacitor is connected to the transistor through a buried contact plug. An oxidation barrier layer lies between the contact plug and the lower electrode of the capacitor. A diffusion barrier layer covers the ferroelectric capacitor to prevent diffusion of material into or out of capacitor. As a result of forming the oxidation barrier layer, the contact plug is not exposed to the ambient oxygen atmosphere thereby providing a reliable ohmic contact between the contact plug and the lower electrode. Also, the memory device provides a triple interconnection structure made of metal, which improves device operation characteristics.

摘要翻译： 公开了三金属线1T / 1C铁电存储器件及其制造方法。 铁电电容器通过埋入式接触插头连接到晶体管。 氧化阻挡层位于电容器的接触插塞和下电极之间。 扩散阻挡层覆盖铁电电容器以防止材料扩散进入或流出电容器。 作为形成氧化阻挡层的结果，接触塞不暴露于环境氧气氛中，从而在接触塞和下电极之间提供可靠的欧姆接触。 此外，存储器件提供由金属制成的三重互连结构，这提高了器件操作特性。

公开(公告)号：US06172386B2

公开(公告)日：2001-01-09

申请号：US09335699

申请日：1999-06-18

申请人： Dong-Jin Jung ,  Ki-Nam Kim

发明人： Dong-Jin Jung ,  Ki-Nam Kim

IPC分类号： H01L2976

CPC分类号： H01L27/11502 ,  H01L28/55

摘要： A ferroelectric capacitor with a ferroelectric film having a relatively larger amount of titanium constituent than zinconate constituent improves ferroelectric characteristics. The method for fabricating the ferroelectric capacitor includes the step of performing a heat treatment in an oxygen atmosphere after forming a contact opening in an insulating layer which covers an already formed ferroelectric capacitor. This heat treatment in an oxygen atmosphere can minimize undesirable side effects resulting from a platinum electrode oxidizing the ferroelectric film components.

摘要翻译： 具有比锌矿物成分更大量的钛铁氧体膜的铁电体电解质提高铁电特性。 制造铁电电容器的方法包括在覆盖已经形成的铁电电容器的绝缘层中形成接触开口之后在氧气氛中进行热处理的步骤。 在氧气氛中的这种热处理可以使由铂电极氧化铁电体膜组分导致的不期望的副作用最小化。

公开(公告)号：US07285810B2

公开(公告)日：2007-10-23

申请号：US10948610

申请日：2004-09-23

申请人： Hyun-Ho Kim ,  Dong-Jin Jung ,  Ki-Nam Kim ,  Sang-Don Nam ,  Kyu-Mann Lee

发明人： Hyun-Ho Kim ,  Dong-Jin Jung ,  Ki-Nam Kim ,  Sang-Don Nam ,  Kyu-Mann Lee

IPC分类号： H01L31/0224

CPC分类号： H01L27/11502 ,  G11C11/22 ,  H01L27/11507

摘要： A ferroelectric memory device includes a microelectronic substrate and a plurality of ferroelectric capacitors on the substrate, arranged as a plurality of rows and columns in respective row and column directions. A plurality of parallel plate lines overlie the ferroelectric capacitors and extend along the row direction, wherein a plate line contacts ferroelectric capacitors in at least two adjacent rows. The plurality of plate lines may include a plurality of local plate lines, and the ferroelectric memory device may further include an insulating layer disposed on the local plate lines and a plurality of main plate lines disposed on the insulating layer and contacting the local plate lines through openings in the insulating layer. In some embodiments, ferroelectric capacitors in adjacent rows share a common upper electrode, and respective ones of the local plate lines are disposed on respective ones of the common upper electrodes. Ferroelectric capacitors in adjacent rows may share a common ferroelectric dielectric region. Related fabrication methods are discussed.

摘要翻译： 铁电存储器件包括微电子衬底和在衬底上的多个铁电电容器，其被布置为在行和列方向上的多个行和列。 多个平行板线覆盖在铁电电容器上并沿着行方向延伸，其中板线在至少两个相邻行中接触铁电电容器。 多个板线可以包括多个局部板线，并且铁电存储器件还可以包括设置在局部板线上的绝缘层和设置在绝缘层上的多个主板线，并且使本地板线通过 绝缘层中的开口。 在一些实施例中，相邻行中的铁电电容器共享公共上电极，并且各自的局部板线设置在相应的公共上电极上。 相邻行中的铁电电容器可以共享公共铁电电介质区域。 讨论相关的制造方法。