- 专利标题: Semiconductor device having a ground plane and manufacturing method thereof
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申请号: US09957020申请日: 2001-09-21
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公开(公告)号: US06515365B2公开(公告)日: 2003-02-04
- 发明人: Kazuyuki Higashi , Noriaki Matsunaga
- 申请人: Kazuyuki Higashi , Noriaki Matsunaga
- 优先权: JP2000-287717 20000921
- 主分类号: H01L2352
- IPC分类号: H01L2352
摘要:
A semiconductor device includes at least first and second lower layer wirings provided on a surface of an insulator on a semiconductor substrate, a first interlayer film provided on the insulator to cover surfaces of the first and second lower layer wirings, first and second connection wirings which are provided on the first interlayer film and include first and second films contacting the first and second lower layer wirings respectively, and a plate electrode which is continuously provided on the second connection wiring and includes at least the first film.
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