发明授权
- 专利标题: Method of forming semiconductor devices with differently composed metal-based gate electrodes
- 专利标题(中): 用不同组合的金属基栅极形成半导体器件的方法
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申请号: US09813310申请日: 2001-03-21
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公开(公告)号: US06518154B1公开(公告)日: 2003-02-11
- 发明人: Matthew S. Buynoski , Qi Xiang , Paul R. Besser
- 申请人: Matthew S. Buynoski , Qi Xiang , Paul R. Besser
- 主分类号: H01L213205
- IPC分类号: H01L213205
摘要:
MOS transistors and CMOS devices comprising a plurality of transistors including metal-based gate electrodes of different composition are formed by a process comprising: depositing a first blanket layer of a first metal on a thin gate insulator layer extending over first and second active device (e.g., a MOS transistor) precursor regions of a semiconductor substrate; selectively forming at least one masking layer segment on the first blanket layer overlying selective ones of the MOS transistor precursor regions; depositing a second blanket layer of a second metal or semi-metal, or silicon, over the thus-formed structure; effecting alloying or silicidation reaction between contacting portions of the first and second blanket layers overlying the other ones of the transistor precursor regions; exposing and selectively removing the masking layer segment; and simultaneously patterning the alloyed and unalloyed/unsilicided portions of the first blanket layer to form metal-based gate electrodes of different composition. The invention also includes MOS and CMOS devices comprising differently composed metal-based gate electrodes.