发明授权
- 专利标题: Liquid phase deposition of a silicon oxide layer for use as a liner on the surface of a dual damascene opening in a low dielectric constant layer
- 专利标题(中): 在低介电常数层的双镶嵌开口的表面上用作衬垫的氧化硅层的液相沉积
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申请号: US09839700申请日: 2001-04-23
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公开(公告)号: US06518166B1公开(公告)日: 2003-02-11
- 发明人: Sheng Hsiung Chen , Shun Long Chen , Hungtse Lin , Frank Hsu , Tsu Shih
- 申请人: Sheng Hsiung Chen , Shun Long Chen , Hungtse Lin , Frank Hsu , Tsu Shih
- 主分类号: H01L214763
- IPC分类号: H01L214763
摘要:
A process for forming a dual damascene opening, in a composite layer comprised with low k layers, to accommodate a dual damascene type, copper structure, has been developed. The process features the use of a silicon oxide layer, formed on the surfaces of the composite layer, exposed in the narrow diameter, via hole component of the dual damascene opening. The silicon oxide layer prevents via poisoning, or outgassing of amines or hydroxyls from the low k layers exposed in the via hole opening, that can evolve during a subsequent photolithographic development cycle, used to define the trench shape component of the dual damascene opening. The protective silicon oxide layer is conformally formed on the exposed-surfaces of the via hole component, via a liquid phase deposition procedure, performed at room temperature.
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