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    Liquid phase deposition of a silicon oxide layer for use as a liner on the surface of a dual damascene opening in a low dielectric constant layer
    1.
    发明授权
    Liquid phase deposition of a silicon oxide layer for use as a liner on the surface of a dual damascene opening in a low dielectric constant layer 有权
    在低介电常数层的双镶嵌开口的表面上用作衬垫的氧化硅层的液相沉积

    公开(公告)号：US06518166B1

    公开(公告)日：2003-02-11

    申请号：US09839700

    申请日：2001-04-23

    申请人： Sheng Hsiung Chen ,  Shun Long Chen ,  Hungtse Lin ,  Frank Hsu ,  Tsu Shih

    发明人： Sheng Hsiung Chen ,  Shun Long Chen ,  Hungtse Lin ,  Frank Hsu ,  Tsu Shih

    IPC分类号： H01L214763

    CPC分类号： H01L21/76831 ,  H01L21/316 ,  H01L21/76808

    摘要： A process for forming a dual damascene opening, in a composite layer comprised with low k layers, to accommodate a dual damascene type, copper structure, has been developed. The process features the use of a silicon oxide layer, formed on the surfaces of the composite layer, exposed in the narrow diameter, via hole component of the dual damascene opening. The silicon oxide layer prevents via poisoning, or outgassing of amines or hydroxyls from the low k layers exposed in the via hole opening, that can evolve during a subsequent photolithographic development cycle, used to define the trench shape component of the dual damascene opening. The protective silicon oxide layer is conformally formed on the exposed-surfaces of the via hole component, via a liquid phase deposition procedure, performed at room temperature.

    摘要翻译： 已经开发了在包含低k层的复合层中形成双镶嵌开口以适应双镶嵌型铜结构的方法。 该方法的特征在于使用形成在复合层的表面上的氧化硅层，其暴露在双重镶嵌开口的窄直径通孔部分中。 氧化硅层防止通过中毒或从在通孔开口中暴露的低k层的胺或羟基脱气，其可以在随后的光刻显影循环期间放出，用于限定双镶嵌开口的沟槽形状分量。 保护性氧化硅层通过在室温下进行的液相沉积程序在通孔部件的暴露表面上共形地形成。