Invention Grant
US06518613B2 Memory cell configuration with capacitor on opposite surface of substrate and method for fabricating the same
有权
具有在基板相对表面上的电容器的存储单元配置及其制造方法
- Patent Title: Memory cell configuration with capacitor on opposite surface of substrate and method for fabricating the same
- Patent Title (中): 具有在基板相对表面上的电容器的存储单元配置及其制造方法
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Application No.: US09968304Application Date: 2001-10-01
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Publication No.: US06518613B2Publication Date: 2003-02-11
- Inventor: Josef Willer , Hans Reisinger , Till Schlosser , Reinhard Stengl
- Applicant: Josef Willer , Hans Reisinger , Till Schlosser , Reinhard Stengl
- Priority: DE19914496 19990330
- Main IPC: H01L27108
- IPC: H01L27108
Abstract:
A MOS transistor of a memory cell and a bit line connected thereto are disposed on a first surface of a substrate. A capacitor of the memory cell is disposed on a second surface of the substrate, the second surface being opposite to the first surface. A contact is disposed in the substrate and connects the capacitor to the MOS transistor.
Public/Granted literature
- US20020071320A1 Memory cell configuration and method for fabricating it Public/Granted day:2002-06-13
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