发明授权
- 专利标题: Integrated CMOS circuit configuration, and production of same
- 专利标题(中): 集成CMOS电路配置,生产相同
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申请号: US09423864申请日: 1999-11-15
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公开(公告)号: US06518628B1公开(公告)日: 2003-02-11
- 发明人: Wolfgang Krautschneider , Franz Hofmann , Lothar Risch
- 申请人: Wolfgang Krautschneider , Franz Hofmann , Lothar Risch
- 优先权: DE19720463 19970515
- 主分类号: H01L2976
- IPC分类号: H01L2976
摘要:
An integrated CMOS circuit arrangement and a method of manufacturing same, which includes both a first MOS transistor and a second MOS transistor complementary thereto, wherein one of the MOS transistors is arranged at the floor of a trench and the other is arranged at the principal surface of a semiconductor substrate. The MOS transistors are arranged relative to one another such that a current flow through the MOS transistors respectively occurs substantially parallel to a sidewall of the trench that is arranged between the MOS transistors.