Invention Grant
- Patent Title: Semiconductor growth method
- Patent Title (中): 半导体生长法
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Application No.: US08667660Application Date: 1996-06-21
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Publication No.: US06521042B1Publication Date: 2003-02-18
- Inventor: Francis G. Celii , Alan J. Katz , Yung-Chung Kao , Theodore S. Moise
- Applicant: Francis G. Celii , Alan J. Katz , Yung-Chung Kao , Theodore S. Moise
- Main IPC: C30B2516
- IPC: C30B2516
Abstract:
Molecular beam epitaxy (202) with growing layer thickness control (206) by feedback of mass spectrometer (204) signals based on a process model. Examples include III-V compound structures with multiple AlAs, InGaAs, and InAs layers as used in resonant tunneling diodes.
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