发明授权
US06524887B2 Embedded recess in polymer memory package and method of making same
失效
聚合物存储器封装中的嵌入式凹槽及其制造方法
- 专利标题： Embedded recess in polymer memory package and method of making same
- 专利标题（中）： 聚合物存储器封装中的嵌入式凹槽及其制造方法
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申请号： US09909529申请日： 2001-07-20
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公开(公告)号： US06524887B2公开(公告)日： 2003-02-25
- 发明人: Jian Li , Xiao-Chun Mu
- 申请人： Jian Li , Xiao-Chun Mu
- 主分类号： H01L2144
- IPC分类号： H01L2144
摘要：
The invention relates to packaging of a novel ferroelectric polymer memory device. Packaging is configured with a recess geometry into which the ferroelectric polymer memory device extends, that resists contact with the polymer portion of the ferroelectric polymer memory device. In one embodiment, an embedded recess geometry is used that resists thermal and mechanical stresses upon the polymer. Also disclosed is a method of forming the ferroelectric polymer memory device. The method may be applied to both inorganic and organic substrates.
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