公开(公告)号：US06524887B2

公开(公告)日：2003-02-25

申请号：US09909529

申请日：2001-07-20

申请人： Jian Li ,  Xiao-Chun Mu

发明人： Jian Li ,  Xiao-Chun Mu

IPC分类号： H01L2144

CPC分类号： G11C5/06 ,  G11C5/04 ,  G11C11/22 ,  H01L23/057 ,  H01L23/08 ,  H01L24/45 ,  H01L24/48 ,  H01L27/11502 ,  H01L27/118 ,  H01L2224/45124 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/01087 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/16152 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00

摘要： The invention relates to packaging of a novel ferroelectric polymer memory device. Packaging is configured with a recess geometry into which the ferroelectric polymer memory device extends, that resists contact with the polymer portion of the ferroelectric polymer memory device. In one embodiment, an embedded recess geometry is used that resists thermal and mechanical stresses upon the polymer. Also disclosed is a method of forming the ferroelectric polymer memory device. The method may be applied to both inorganic and organic substrates.

摘要翻译： 本发明涉及新型铁电聚合物存储器件的封装。 包装被构造为具有凹槽几何形状，铁电聚合物存储器件延伸到该凹槽几何形状中，其抵抗与铁电聚合物存储器件的聚合物部分的接触。 在一个实施例中，使用嵌入式凹槽几何形状来抵抗聚合物上的热和机械应力。还公开了形成铁电聚合物存储器件的方法。 该方法可以应用于无机和有机衬底。

公开(公告)号：US06461954B1

公开(公告)日：2002-10-08

申请号：US09929408

申请日：2001-08-14

申请人： Jian Li ,  Xiao-Chun Mu ,  Sridhar Balakrishnan

发明人： Jian Li ,  Xiao-Chun Mu ,  Sridhar Balakrishnan

IPC分类号： H01L2130

CPC分类号： H01L23/485 ,  H01L24/05 ,  H01L24/11 ,  H01L2224/0401 ,  H01L2224/05558 ,  H01L2224/05572 ,  H01L2224/13022 ,  H01L2224/13099 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/0105 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/14 ,  Y10T428/12479 ,  Y10T428/12556 ,  Y10T428/12583 ,  Y10T428/12743 ,  Y10T428/12812 ,  Y10T428/31678 ,  H01L2224/05552

摘要： Methods and apparatuses are disclosed in which a refractory layer is formed during rapid thermal processing wherein ambient hydrogen is used in the thermal processing chamber. Rapid thermal processing may occur at a temperature approximately in the range of 350° C. to approximately 550° C.

公开(公告)号：US06960479B2

公开(公告)日：2005-11-01

申请号：US09960125

申请日：2001-09-21

申请人： Jian Li ,  Xiao-Chun Mu

发明人： Jian Li ,  Xiao-Chun Mu

IPC分类号： G11C11/22 ,  H01L21/00 ,  H01L27/28 ,  H01L31/113 ,  H01L31/119 ,  H01R4/24 ,  H01R13/648 ,  H01R33/02 ,  H01R39/00

CPC分类号： G11C11/22 ,  B82Y10/00 ,  H01L27/285

摘要： The present invention relates to a ferroelectric polymer storage device including at least two stacked ferroelectric polymer memory structures that are arrayed next to at least two respective stacked topologies that are a pre-fabricated silicon substrate cavity that includes interlayer dielectric layers and via structures. Combining ferroelectric polymer and ferroelectric oxide layers on the pre-fabricated silicon substrate cavity forms a multi-rank structure.

摘要翻译： 铁电聚合物储存装置技术领域本发明涉及一种铁电聚合物储存装置，其包括至少两个层叠的铁电聚合物存储结构，它们被排列在至少两个相应堆叠的拓扑结构之上，该拓扑结构是包括层间电介质层和通孔结构的预制硅衬底腔。 在预制的硅衬底空腔上组合铁电聚合物和铁电氧化物层形成多级结构。

公开(公告)号：US06312830B1

公开(公告)日：2001-11-06

申请号：US09389162

申请日：1999-09-02

申请人： Jian Li ,  Xiao-Chun Mu ,  Sridhar Balakrishnan

发明人： Jian Li ,  Xiao-Chun Mu ,  Sridhar Balakrishnan

IPC分类号： H01L23528

CPC分类号： H01L23/485 ,  H01L24/05 ,  H01L24/11 ,  H01L2224/0401 ,  H01L2224/05558 ,  H01L2224/05572 ,  H01L2224/13022 ,  H01L2224/13099 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/0105 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/14 ,  Y10T428/12479 ,  Y10T428/12556 ,  Y10T428/12583 ,  Y10T428/12743 ,  Y10T428/12812 ,  Y10T428/31678 ,  H01L2224/05552

摘要： One embodiment of the invention involves a refractory layer formed over a substrate during rapid thermal processing in which ambient hydrogen is used in a thermal processing chamber. Rapid thermal processing may occur at a temperature approximately in the range of 350° C. to approximately 550° C.

摘要翻译： 本发明的一个实施方案涉及在快速热处理过程中在衬底上形成的耐火层，其中在热处理室中使用环境氢。 快速热处理可以在大约350℃至大约550℃的温度下进行。

公开(公告)号：US06798003B2

公开(公告)日：2004-09-28

申请号：US09909375

申请日：2001-07-20

申请人： Jian Li ,  Xiao-Chun Mu

发明人： Jian Li ,  Xiao-Chun Mu

IPC分类号： H01L4700

CPC分类号： H01L27/11507 ,  H01L27/11502 ,  Y10S438/939

摘要： A polymer memory device includes two organic adhesion layers that facilitate an integral package comprising a lower and an upper electrode and the ferroelectric polymer memory structure. The ferroelectric polymer memory structure includes crystalline ferroelectric polymer layers such as single and co-polymer compositions. The structure includes spin-on and/or Langmuir-Blodgett deposited compositions. A memory system allows the polymer memory device to interface with various existing hosts.

摘要翻译： 聚合物存储器件包括两个有机粘合层，其有助于包含下电极和上电极以及铁电聚合物存储器结构的整体封装。 铁电聚合物记忆结构包括结晶铁电聚合物层，例如单一和共聚物组合物。 该结构包括旋转和/或Langmuir-Blodgett沉积的组合物。存储器系统允许聚合物存储器件与各种现有主机接口。

公开(公告)号：US06624457B2

公开(公告)日：2003-09-23

申请号：US09909670

申请日：2001-07-20

申请人： Jian Li ,  Xiao-Chun Mu

发明人： Jian Li ,  Xiao-Chun Mu

IPC分类号： H01L31119

CPC分类号： G11C11/22 ,  B82Y10/00 ,  H01L27/285

摘要： The present invention relates to a ferroelectric polymer storage device including at least two stacked ferroelectric polymer memory structures that are arrayed next to at least two respective stacked topologies that are a pre-fabricated silicon substrate cavity that includes interlayer dielectric layers and via structures.

摘要翻译： 铁电聚合物储存装置技术领域本发明涉及一种铁电聚合物储存装置，其包括至少两个层叠的铁电聚合物存储结构，它们被排列在至少两个相应堆叠的拓扑结构之上，该拓扑结构是包括层间电介质层和通孔结构的预制硅衬底腔。

公开(公告)号：US06586822B1

公开(公告)日：2003-07-01

申请号：US09658819

申请日：2000-09-08

申请人： Quat T. Vu ,  Jian Li ,  Qing Ma ,  Maria V. Henao ,  Xiao-Chun Mu

发明人： Quat T. Vu ,  Jian Li ,  Qing Ma ,  Maria V. Henao ,  Xiao-Chun Mu

IPC分类号： H01L2302

CPC分类号： H01L24/19 ,  H01L21/568 ,  H01L23/532 ,  H01L24/96 ,  H01L24/97 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16225 ,  H01L2224/20 ,  H01L2224/92 ,  H01L2224/97 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/18162 ,  H01L2924/19041 ,  Y10T29/4935 ,  H01L2224/96 ,  H01L2224/82 ,  H01L2924/00

摘要： A microelectronic package including a microelectronic die disposed within an opening in a microelectronic packaging core, wherein an encapsulation material is disposed within portions of the opening not occupied by the microelectronic die. Build-up layers of dielectric materials and conductive traces are then fabricated on the microelectronic die, the encapsulant material, and the microelectronic package core to form the microelectronic package.

摘要翻译： 一种微电子封装，包括设置在微电子封装芯中的开口内的微电子管芯，其中封装材料设置在不被微电子管芯占据的开口部分内。 然后在微电子管芯，密封剂材料和微电子封装芯上制造介电材料和导电迹线的堆积层以形成微电子封装。

公开(公告)号：US07078240B2

公开(公告)日：2006-07-18

申请号：US10761397

申请日：2004-01-20

申请人： Jian Li ,  Xiao-Chun Mu

发明人： Jian Li ,  Xiao-Chun Mu

IPC分类号： H01L21/00 ,  H01L51/40 ,  H01L21/20

CPC分类号： H01L27/11507 ,  H01L27/11502 ,  Y10S438/939

摘要： A polymer memory device include two organic adhesion layers that facilitate an integral package comprising a lower and an upper electrode and the ferroelectric polymer memory structure. The ferroelectric polymer memory structure includes crystalline ferroelectric polymer layers such as single and co-polymer compositions. The structure includes spin-on and/or Langmuir-Blodgett deposited compositions.A memory system allows the polymer memory device to interface with various existing hosts.

公开(公告)号：US07018853B1

公开(公告)日：2006-03-28

申请号：US10651721

申请日：2003-08-29

申请人： Jian Li ,  Xiao-Chun Mu

发明人： Jian Li ,  Xiao-Chun Mu

IPC分类号： H01L21/00

CPC分类号： G11C11/22 ,  B82Y10/00 ,  H01L27/285

摘要： The present invention relates to a ferroelectric polymer storage device including at least two stacked ferroelectric polymer memory structures that are arrayed next to at least two respective stacked topologies that are a pre-fabricated silicon substrate cavity that includes interlayer dielectric layers and via structures.

公开(公告)号：US06952017B2

公开(公告)日：2005-10-04

申请号：US10762955

申请日：2004-01-21

申请人： Jian Li ,  Xiao-Chun Mu ,  Mark Isenberger

发明人： Jian Li ,  Xiao-Chun Mu ,  Mark Isenberger

IPC分类号： H01L21/28 ,  H01L27/115 ,  H01L29/51 ,  H01L29/06

CPC分类号： H01L27/11502 ,  H01L21/28291 ,  H01L29/516

摘要： One embodiment of the invention relates to a polymer memory device and a method of making it. The polymer memory device may include a composite or single layer of a ferroelectric polymer memory that addresses surface engineering needs according to various embodiments. The ferroelectric polymer memory structure may include crystalline ferroelectric polymer layers such as single and co-polymer compositions. The structure may include spin-on and/or Langmuir-Blodgett deposited compositions.One embodiment of the invention relates to a method making embodiments of the polymer memory device. One embodiment of the invention relates to a memory system that allows the polymer memory device to interface with various existing hosts.

摘要翻译： 本发明的一个实施方案涉及聚合物记忆装置及其制备方法。 聚合物存储器件可以包括根据各种实施例的满足表面工程需要的铁电聚合物存储器的复合层或单层。 铁电聚合物记忆结构可以包括结晶铁电聚合物层，例如单一和共聚物组合物。 该结构可以包括旋涂和/或Langmuir-Blodgett沉积的组合物。 本发明的一个实施方案涉及制备聚合物存储器件的实施方案的方法。 本发明的一个实施例涉及允许聚合物存储器件与各种现有主机接口的存储器系统。