An integrated adjustable capacitor device and method for making such a device are provided. The adjustable capacitor includes an underlying electrode, a dielectric cavity, an upper electrode, and an etch cavity for removing sacrificial material from the dielectric cavity. The surface of the device is relatively flat due to epitaxal deposition of epi polysilicon and single crystal silicon. The adjustable capacitor system is capable of undergoing CMOS processes without requiring additional steps of covering the capacitor device to protect it and then removing the covering following the CMOS processes.