- 专利标题: Semiconductor device and its manufacturing method
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申请号: US09826269申请日: 2001-04-04
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公开(公告)号: US06525424B2公开(公告)日: 2003-02-25
- 发明人: Kensho Murata , Mutsumi Masumoto , Kenji Masumoto
- 申请人: Kensho Murata , Mutsumi Masumoto , Kenji Masumoto
- 优先权: JP2000-102429 20000404
- 主分类号: H01L2348
- IPC分类号: H01L2348
摘要:
Improve the productivity and cost for the manufacturing of a semiconductor device referred to as a wafer level CSP. The manufacturing method for a semiconductor device related to this invention contains each of the processes that form a wiring (18) for the purpose of electrically connecting each electrode pad (10a) and external connecting terminals on top of a wafer (10) on which semiconductor elements are formed, connect conductive balls that are preformed by a separate process on top of this, and next, cover the above-mentioned wafer with a resin (32) such that the upper portion of the conductive supporting posts (30) are exposed. In a later process, solder balls (34) are arranged as external connecting terminals on the upper portion of the conductive supporting posts, and in the final process, semiconductor elements are formed by dicing the above-mentioned wafer along the boundary lines of the above-mentioned semiconductor elements.
公开/授权文献
- US20020145198A1 Semiconductor device and its manufacturing method 公开/授权日:2002-10-10
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