发明授权
- 专利标题： Liner materials
- 专利标题（中）： 衬里材料
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申请号： US09577705申请日： 2000-05-23
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公开(公告)号： US06528180B1公开(公告)日： 2003-03-04
- 发明人: Wei Ti Lee , Ted Guo , Gongda Yao
- 申请人： Wei Ti Lee , Ted Guo , Gongda Yao
- 主分类号： H01L2940
- IPC分类号： H01L2940
摘要：
A method for metallizing integrated circuits is disclosed. In one aspect, an integrated circuit is metallized by depositing liner material on a substrate followed by one or more metal layers. The liner material is selected from the group of tantalum (Ta), tantalum nitride (TaN), niobium (Nb), niobium nitride (NbN), vanadium (V), vanadium nitride (VN), and combinations thereof. The liner material is preferably conformably deposited on the substrate using physical vapor deposition (PVD). The one or more metal layers are deposited on the barrier layer using chemical vapor deposition (CVD), physical vapor deposition (PVD), or a combination of both CVD and PVD.
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