发明授权
US06528327B2 Method for fabricating semiconductor memory device having a capacitor
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具有电容器的半导体存储器件的制造方法
- 专利标题: Method for fabricating semiconductor memory device having a capacitor
- 专利标题(中): 具有电容器的半导体存储器件的制造方法
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申请号: US09922782申请日: 2001-08-07
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公开(公告)号: US06528327B2公开(公告)日: 2003-03-04
- 发明人: Yoshihisa Nagano , Toru Nasu , Hajime Yasuoka , Eiji Fujii
- 申请人: Yoshihisa Nagano , Toru Nasu , Hajime Yasuoka , Eiji Fujii
- 优先权: JP2000-252105 20000823
- 主分类号: H01L218242
- IPC分类号: H01L218242
摘要:
A contact plug is formed in a contact hole, which has been formed through a passivation film on a substrate, so that a recess is left over the contact plug. Then, the passivation film is dry-etched so that the opening of the recess is expanded or that the depth of the recess is reduced. After that, lower electrode, which will be connected to the contact plug, capacitive insulating film of an insulating metal oxide and upper electrode are formed in this order to make a capacitor.
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