公开(公告)号：US07603423B2

公开(公告)日：2009-10-13

申请号：US11192732

申请日：2005-07-29

申请人： Takayuki Ito ,  Hidenori Miyamoto ,  Toru Nasu ,  Shikiko Kawano

发明人： Takayuki Ito ,  Hidenori Miyamoto ,  Toru Nasu ,  Shikiko Kawano

IPC分类号： G06F15/16 ,  H04L12/28

CPC分类号： H04L51/22 ,  H04L51/30

摘要： When a mail server 31 and a mail server 32 are in a failover state, switches 21, 22 select communication paths E, F. A temporary save server 50 stores email received from a mail reception server 10 during the failover in a disk storage 60, and after the completion of the failover, transmits to a mail server (e.g., mail server 32) that has been switched to function as a primary system an email stored in disk storage 60 and a write request for a disk storage 40. Mail server 32, upon receiving an email and a write request from temporary save server 50, stores the received email to disk storage 40 to update stored content.

摘要翻译： 当邮件服务器31和邮件服务器32处于故障转移状态时，交换机21,22选择通信路径E，F。临时保存服务器50将在故障转移期间从邮件接收服务器10接收的电子邮件存储在磁盘存储器60中， 并且在完成故障切换之后，将已经被切换为用作主系统的邮件服务器（例如，邮件服务器32）存储在磁盘存储器60中的电子邮件和对磁盘存储器40的写入请求。邮件服务器32 在从临时保存服务器50接收到电子邮件和写入请求时，将接收到的电子邮件存储到磁盘存储器40以更新存储的内容。

公开(公告)号：US06333528B1

公开(公告)日：2001-12-25

申请号：US09071795

申请日：1998-05-04

申请人： Koji Arita ,  Eiji Fujii ,  Yasuhiro Shimada ,  Yasuhiro Uemoto ,  Toru Nasu ,  Akihiro Matsuda ,  Yoshihisa Nagano ,  Atsuo Inoue ,  Taketoshi Matsuura ,  Tatsuo Otsuki

发明人： Koji Arita ,  Eiji Fujii ,  Yasuhiro Shimada ,  Yasuhiro Uemoto ,  Toru Nasu ,  Akihiro Matsuda ,  Yoshihisa Nagano ,  Atsuo Inoue ,  Taketoshi Matsuura ,  Tatsuo Otsuki

IPC分类号： H01L2976

CPC分类号： H01L27/11502 ,  H01L27/10852 ,  H01L27/11585 ,  H01L27/1159 ,  H01L28/40 ,  H01L28/55 ,  H01L28/60 ,  H01L28/75 ,  Y10S438/958

摘要： A semiconductor device forming a capacitor through an interlayer insulating layer on a semiconductor substrate on which an integrated circuit is formed. This semiconductor device has an interlayer insulating layer with moisture content of 0.5 g/cm3 or less, which covers the capacitor in one aspect, and has a passivation layer with hydrogen content of 1021 atoms/cm3 or less, which covers the interconnections of the capacitor in other aspect. By thus constituting, deterioration of the capacitor dielectric can be prevented which brings about the electrical reliability of the ferroelectric layer or high dielectric layer.

摘要翻译： 一种通过半导体衬底上的层间绝缘层形成电容器的半导体器件，其上形成集成电路。 该半导体装置具有含水量为0.5g / cm 3以下的层间绝缘层，其在一个方面覆盖电容器，并且具有氢含量为1021原子/ cm3以下的钝化层，其覆盖电容器的互连 在其他方面。 通过这样构成，可以防止导致铁电层或高介电层的电可靠性的电容器电介质的劣化。

公开(公告)号：US06326671B1

公开(公告)日：2001-12-04

申请号：US09452620

申请日：1999-12-01

申请人： Yoshihisa Nagano ,  Keisuke Tanaka ,  Toru Nasu

发明人： Yoshihisa Nagano ,  Keisuke Tanaka ,  Toru Nasu

IPC分类号： H01L3107

CPC分类号： H01L27/11502 ,  H01L21/76895 ,  H01L27/11507 ,  H01L28/40

摘要： A semiconductor memory device, includes: a semiconductor substrate including a transistor; a first protective insulating film for covering the semiconductor substrate; at least one data storage capacitor element formed on the first protective insulating film; a second protective insulating film for covering the first protective insulating film and the capacitor element; a hydrogen carrier layer; and an interconnection layer for electrically connecting the transistor and the capacitor element, wherein: the capacitor element includes a lower electrode formed on the first protective insulating film, a capacitor film formed on the lower electrode, and an upper electrode formed on the capacitor film, the capacitor film includes an insulating metal oxide, the second protective insulating film has a first contact hole reaching the upper electrode and a second contact hole reaching the lower electrode, and the hydrogen barrier layer is provided in the first and second contact holes, so as not to expose the upper and the lower electrodes.

摘要翻译： 一种半导体存储器件，包括：包括晶体管的半导体衬底; 用于覆盖半导体衬底的第一保护绝缘膜; 形成在所述第一保护绝缘膜上的至少一个数据存储电容器元件; 用于覆盖第一保护绝缘膜和电容器元件的第二保护绝缘膜; 氢载体层; 以及用于电连接所述晶体管和所述电容器元件的互连层，其中：所述电容器元件包括形成在所述第一保护绝缘膜上的下电极，形成在所述下电极上的电容器膜，以及形成在所述电容器膜上的上电极， 电容器膜包括绝缘金属氧化物，第二保护绝缘膜具有到达上电极的第一接触孔和到达下电极的第二接触孔，并且氢阻挡层设置在第一和第二接触孔中，因此 不暴露上下电极。

公开(公告)号：US6015987A

公开(公告)日：2000-01-18

申请号：US71122

申请日：1998-05-04

申请人： Koji Arita ,  Eiji Fujii ,  Yasuhiro Shimada ,  Yasuhiro Uemoto ,  Toru Nasu ,  Akihiro Matsuda ,  Yoshihisa Nagano ,  Atsuo Inoue ,  Taketoshi Matsuura ,  Tatsuo Otsuki

发明人： Koji Arita ,  Eiji Fujii ,  Yasuhiro Shimada ,  Yasuhiro Uemoto ,  Toru Nasu ,  Akihiro Matsuda ,  Yoshihisa Nagano ,  Atsuo Inoue ,  Taketoshi Matsuura ,  Tatsuo Otsuki

IPC分类号： H01L21/02 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/115 ,  H01L27/108 ,  H01L29/00 ,  H01L29/76 ,  H01L29/94

CPC分类号： H01L27/11502 ,  H01L27/10852 ,  H01L27/11585 ,  H01L27/1159 ,  H01L28/40 ,  H01L28/55 ,  H01L28/60 ,  H01L28/75 ,  Y10S438/958

摘要： A semiconductor device forming a capacitor through an interlayer insulating layer on a semiconductor substrate on which an integrated circuit is formed. This semiconductor device has an interlayer insulating layer with moisture content of 0.5 g/cm.sup.3 or less, which covers the capacitor in one aspect, and has a passivation layer with hydrogen content of 10.sup.21 atoms/cm.sup.3 or less, which covers the interconnections of the capacitor in other aspect. By thus constituting, deterioration of the capacitor dielectric can be prevented which brings about the electrical reliability of the ferroelectric layer or high dielectric layer.

摘要翻译： 一种通过半导体衬底上的层间绝缘层形成电容器的半导体器件，其上形成集成电路。 该半导体装置具有含水量为0.5g / cm 3以下的层间绝缘层，其在一个方面覆盖电容器，并且具有氢含量为1021原子/ cm3以下的钝化层，其覆盖电容器的互连 在其他方面。 通过这样构成，可以防止导致铁电层或高介电层的电可靠性的电容器电介质的劣化。

公开(公告)号：US5644158A

公开(公告)日：1997-07-01

申请号：US492690

申请日：1995-06-20

申请人： Eiji Fujii ,  Atsuo Inoue ,  Koji Arita ,  Toru Nasu ,  Akihiro Matsuda

发明人： Eiji Fujii ,  Atsuo Inoue ,  Koji Arita ,  Toru Nasu ,  Akihiro Matsuda

IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/324 ,  H01L21/768 ,  H01L21/822 ,  H01L27/10 ,  H01L21/3205

CPC分类号： H01L28/40 ,  H01L21/3105 ,  H01L21/76828

摘要： A semiconductor device comprising: (a) a semiconductor substrate on whose surface an integrated circuit is formed, (b) a first insulating layer formed on the semiconductor device and having first contact holes which lead to the integrated circuit, (c) a capacitance element formed on the first insulating layer, (d) a second insulating layer formed on the first insulating layer to cover the capacitance element, and having second contact holes which lead to an upper and a lower electrodes of the capacitance element respectively, and (e) interconnections which are connected to the integrated circuit and the capacitance element respectively through the first and second contact holes. The hydrogen density of this semiconductor device is 10.sup.11 atoms/cm.sup.2 or less.

摘要翻译： 一种半导体器件，包括：（a）在其表面上形成集成电路的半导体衬底，（b）形成在半导体器件上并具有通向集成电路的第一接触孔的第一绝缘层，（c）电容元件 形成在所述第一绝缘层上，（d）形成在所述第一绝缘层上以覆盖所述电容元件的第二绝缘层，以及具有分别通向所述电容元件的上下电极的第二接触孔，以及（e） 互连通过第一和第二接触孔分别连接到集成电路和电容元件。 该半导体器件的氢密度为1011原子/ cm 2以下。

公开(公告)号：US5624864A

公开(公告)日：1997-04-29

申请号：US284984

申请日：1994-08-04

申请人： Koji Arita ,  Eiji Fujii ,  Yasuhiro Shimada ,  Yasuhiro Uemoto ,  Toru Nasu ,  Akihiro Matsuda ,  Yoshihisa Nagano ,  Atsuo Inoue ,  Taketoshi Matsuura ,  Tatsuo Otsuki

发明人： Koji Arita ,  Eiji Fujii ,  Yasuhiro Shimada ,  Yasuhiro Uemoto ,  Toru Nasu ,  Akihiro Matsuda ,  Yoshihisa Nagano ,  Atsuo Inoue ,  Taketoshi Matsuura ,  Tatsuo Otsuki

IPC分类号： H01L21/02 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/115

CPC分类号： H01L27/11502 ,  H01L27/10852 ,  H01L27/11585 ,  H01L27/1159 ,  H01L28/40 ,  H01L28/55 ,  H01L28/60 ,  H01L28/75 ,  Y10S438/958

摘要： A semiconductor device forming a capacitor through an interlayer insulating layer on a semiconductor substrate on which an integrated circuit is formed. This semiconductor device has an interlayer insulating layer with moisture content of 0.5 g/cm.sup.3 or less, which covers the capacitor in one aspect, and has a passivation layer with hydrogen content of 10.sup.21 atoms/cm.sup.3 or less, which covers the interconnections of the capacitor in other aspect. By thus constituting, deterioration of the capacitor dielectric can be prevented which brings about the electrical reliability of the ferroelectric layer or high dielectric layer.

摘要翻译： 一种通过半导体衬底上的层间绝缘层形成电容器的半导体器件，其上形成集成电路。 该半导体装置具有含水量为0.5g / cm 3以下的层间绝缘层，其在一个方面覆盖电容器，并且具有氢含量为1021原子/ cm3以下的钝化层，其覆盖电容器的互连 在其他方面。 通过这样构成，可以防止导致铁电层或高介电层的电可靠性的电容器电介质的劣化。

公开(公告)号：US07304341B2

公开(公告)日：2007-12-04

申请号：US11415069

申请日：2006-05-02

申请人： Takumi Mikawa ,  Toru Nasu

发明人： Takumi Mikawa ,  Toru Nasu

IPC分类号： H01L27/108 ,  H01L29/76 ,  H01L29/94 ,  H01L31/119

CPC分类号： H01L28/55 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/65 ,  H01L28/91

摘要： A semiconductor device comprises: an insulating film formed over a semiconductor substrate and having a first recess; a plurality of capacitor elements each of which is composed of a capacitor lower electrode formed on wall and bottom portions of the first recess and having a second recess, a capacitor insulating film of a dielectric film formed on wall and bottom portions of the second recess and having a third recess, and a capacitor upper electrode formed on wall and bottom portions of the third recess; and a conductive layer (referred hereinafter to as a low-resistance conductive layer) which is formed to cover at least portions of the respective capacitor upper electrodes constituting the plurality of capacitor elements and to extend across the plurality of capacitor elements and which has a lower resistance than the capacitor upper electrode.

摘要翻译： 半导体器件包括：形成在半导体衬底上并具有第一凹槽的绝缘膜; 多个电容器元件，每个电容器元件由形成在第一凹部的壁和底部上的电容器下电极组成，并具有第二凹部，形成在第二凹部的壁和底部上的电介质膜的电容绝缘膜， 具有第三凹部和形成在第三凹部的壁部和底部上的电容器上电极; 以及形成为覆盖构成多个电容器元件的各个电容器上电极的至少一部分并且跨越多个电容器元件并且具有较低电容器元件的导电层（以下称为低电阻导电层） 电阻比电容器上电极。

公开(公告)号：US20070161126A1

公开(公告)日：2007-07-12

申请号：US11540752

申请日：2006-10-02

申请人： Shinichiro Hayashi ,  Toru Nasu

发明人： Shinichiro Hayashi ,  Toru Nasu

IPC分类号： H01L21/00

CPC分类号： H01G4/085 ,  H01G4/1254 ,  H01G4/33 ,  H01L28/55 ,  H01L28/65

摘要： In a ferroelectric capacitor comprising: a lower electrode; a ferroelectric film formed on the lower electrode; and an upper electrode formed on the ferroelectric film, the coercive voltage of the ferroelectric film is 1.5 V or less and the polarization switching time of the ferroelectric film is 200 ns or less.

摘要翻译： 在铁电电容器中，包括：下电极; 形成在下电极上的铁电膜; 形成在强电介质膜上的上电极，强电介质膜的矫顽电压为1.5V以下，强电介质膜的极化切换时间为200ns以下。

公开(公告)号：US07220598B1

公开(公告)日：2007-05-22

申请号：US09639157

申请日：2000-08-16

申请人： Toru Nasu ,  Shinichiro Hayashi

发明人： Toru Nasu ,  Shinichiro Hayashi

IPC分类号： H01L21/00

CPC分类号： H01L27/11502 ,  H01L21/31691 ,  H01L27/11507

摘要： A method of making a ferroelectric thin film includes the step of forming a ferroelectric thin film with a randomly oriented layered structure on a surface of a conductor layer. At least the surface of the conductor layer has a spherical crystal structure.

摘要翻译： 制造铁电薄膜的方法包括在导体层的表面上形成具有随机取向的层状结构的铁电薄膜的步骤。 至少导体层的表面具有球形晶体结构。

公开(公告)号：US06809000B2

公开(公告)日：2004-10-26

申请号：US09797987

申请日：2001-03-05

申请人： Keisaku Nakao ,  Akihiro Matsuda ,  Yasufumi Izutsu ,  Toyoji Ito ,  Takumi Mikawa ,  Toru Nasu ,  Yoshihisa Nagano ,  Keisuke Tanaka ,  Toshie Kutsunai

发明人： Keisaku Nakao ,  Akihiro Matsuda ,  Yasufumi Izutsu ,  Toyoji Ito ,  Takumi Mikawa ,  Toru Nasu ,  Yoshihisa Nagano ,  Keisuke Tanaka ,  Toshie Kutsunai

IPC分类号： H01L2120

CPC分类号： H01L28/55

摘要： The semiconductor device of the invention includes a capacitor device, which is formed on a substrate and which includes a capacitive lower electrode, a capacitive insulating film made of an insulating metal oxide film and a capacitive upper electrode. An interlevel insulating film having an opening reaching the capacitive upper electrode is formed over the capacitor device. A metal interconnection including a titanium film is formed over the interlevel insulating film so as to be electrically connected to the capacitive upper electrode through the opening. An anti-diffusion film having conductivity is formed between the capacitive upper electrode and the metal interconnection for preventing titanium atoms composing the titanium film of the metal interconnection from passing through the capacitive upper electrode and diffusing into the capacitive insulating film.

摘要翻译： 本发明的半导体器件包括形成在基板上的电容器器件，其包括电容式下电极，由绝缘金属氧化物膜制成的电容绝缘膜和电容上电极。 在电容器装置上形成具有到达电容上电极的开口的层间绝缘膜。 在层间绝缘膜上形成包括钛膜的金属互连，以便通过开口与电容上电极电连接。 在电容上电极和金属互连之间形成具有导电性的防扩散膜，以防止构成金属互连的钛膜的钛原子通过电容上电极并扩散到电容绝缘膜。